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《Journal of Changsha University of Electric Power(Natural Science)》 2003-02
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Diffusion by Boron Implantation into Silicon

KONG Fanzhi, WEN Yongjun, LIAO Jiaxin, TANG Guiping(Dept. of Phys. & Information Eng., Changsha Univ.of .Electr.Power,Changsha 410077,China)  
Boron is the primary impurity in semiconductor material,and accurately controling impurity density of section is one of the key questions in semiconductor-technics. The diffusion of Boron in Silicon is discussed from the perspectives of both theory and experiment.
【CateGory Index】: TN305.4
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