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《Journal of Magnetic Materials and Devices》 2007-04
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Influence of Anti-ferromagnetic Exchange Interaction on the Curie Temperature of DMS

HU Zuo-qi, CHEN Fei Department of Electric Science and Technology, Huazhong University of Science and Technology, Wuhan 430074, China  
Curie temperature of diluted magnetic semiconductor (DMS) has a strong dependence on the hole carrier concentration. In this paper, we analyzed the influence of anti-ferromagnetic exchange interaction on the Curie temperature of DMS based on the local hole model. The results showed that the influence of anti-ferromagnetic exchange interaction on the Curie temperature is closely related to the concentration ratio of magnetic ions to holes. When ni/nc10000, the influence of anti-ferromagnetic exchange interaction on the Curie temperature is very noticeable. When ni/nc10, the above-mentioned influence will be significantly weakened. With the increase of hole concentration, the holes will greatly restrain the anti-ferromagnetic exchange interaction.
【CateGory Index】: TN304.7
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