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《CHINESE JOURNAL OF MATERIAL RESEARCH》 1996-03
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CHARACTERISTICS OF SOLUTE REDISTRIBUTION DURING CRYSTAL GROWTH OF CdTe AND THE SELECTION OF GROWTH PARAMETERS

JIE Wanqi(Stale Key Laboratory of Solidification Processing,Northwestern Polytechnical University)(Correspondent:JIE Wanqi,State Key Laboratory of Solidification Processing,Northwestern Polytechnical University,Xi'an 710072)  
From Cd-Te binary phase diagram,CdTe-Cd phase diagram and its parameters are obtained.By discussing the solute redistribution during CdTe crystal growth from CdTe solutions with different amount of extra Cd in Bridgman process,the solubility of Te in CdTe crystal is evaluated.The minimum temperature gradient for keeping planar liquid / solid interface is also studied.
【Fund】: 航空科学基金 国家教委优秀年轻教师基金
【CateGory Index】: TN304.25
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【References】
Chinese Journal Full-text Database 1 Hits
1 JIE Wanqi(Northwestern Polytechnical University,Xi'an 710072,China);Solute Partition and Segregation in Bridgman Growth Process[J];Materials China;2009-02
【Co-references】
Chinese Journal Full-text Database 10 Hits
1 Zhu Jiqian; Chu Junhao; Zhang Xiaoping; Li Biao and Cheng Jijian (National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics,The Chinese Academy of Sciences, Shangha 200083)(Departmeat of Inorganic Materials, East China Uniersity o;Study on Crystalline Quality of Cd-Annealing CdZnTe Wafers Grown by Bridgman Method[J];CHINESE JOURNAL OF SEMICONDUCTORS;1997-10
2 Li Yujie, Liu Xiaohua, Jie Wanqi(The State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi'an\ 710072);Defect Etching of Infrared Semiconductor HgMnTe[J];CHINESE JOURNAL OF SEMICONDUCTORS;1999-09
3 Yang Bailiang\+1, Yukic Ishikawa\+2, Minoru Isshiki\+2(1\ Changchun Institute of Physics, The Chinese Academy of Sciences, Changchun\ 130021) (2\ Institute for Advanced Materials Processing, Tohoku University, Japan)Received 2 July 1998, revised manuscr;Infrared Extinction in CdTe Single Crystal[J];CHINESE JOURNAL OF SEMICONDUCTORS;1999-11
4 Gu Huiming, Yang Jianrong, Chen Xinqiang, He Li(Epitaxy Research Center for Advanced Material and National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, The Chinese Academy of Sciences, Shanghai\ 200083)Received 28 July 1998,;Distribution Behavior of Dislocation in CdZnTe Materials[J];CHINESE JOURNAL OF SEMICONDUCTORS;1999-12
5 LIU Xiaohua; GUO Xiping;JIE Wanqi;ZHOU Yaohe(State Key Laboratory of Solidification Processing, Northwestern Polytechnical University,Xi 'an 710072, China);RADIAL SOLUTE SEGREGATION DURING UNIDIRECTIONAL SOLIDIFICATION[J];CHINESE JOURNAL OF MATERIAL RESEARCH;1998-02
6 Xie Quan \ Liu Rangsu\ Xu Zhongyu \ Peng Ping (Physics Department of Hunan University, Changsha 410082) ( * Chemistry Department of Hunan University, Changsha 410082) Zhang Youyu (Testing Centre of Hunan Normal University, Changsha 410081);Analysis on The Microstructure of Graphite Carbon Black and Silica in Rubber[J];JOURNAL OF CHINESE ELECTRON MICROSCOPY SOCIETY;1998-02
7 /Yao Ying; Cai yi; OuMingdi; Liang Honglin and Zhu Xichen (1.Kunming Institute of Phyaics, Kunming,650223. 2. National Laboratory of Infrared Phyaics, Academia Sinica, Shanghai,200083);Surface Damage of HgCdTe Wafers in Lapping and Polishing[J];INFRARED TECHNOLOGY;1994-05
8 Tang Jiatian; Mo Yudong; Lei Chunhong; Chen Jiancai; Song Bingwen(Kunming Institute of Physics,Kunming, 650223);Study on Plastic Deformation in CZT Crystal[J];INFRARED TECHNOLOGY;1995-02
9 Li Quanbao(Kunming Institute of Physics, Kunming 650223);Study on Stacking Faults in HgCdTe Crystals[J];INFRARED TECHNOLOGY;1995-02
10 Gu Huiming Yang Jianrong Chen Xinqiang He Li (Epitaxy Research Center for Advanced Material and National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China);Difference of EPDs on(111) B and (211) B Faces of CdZnTe Crystals by Using Everson Etch[J];JOURNAL OF SYNTHETIC CRYSTALS;1999-02
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