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《Transactions of China Electrotechnical Society》 2007-11
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Influence of Anti-Paralleled Diode on the Turn-Off Performance of IGCT

Tong Yibin Zhang Chan (Beijing Jiaotong University Beijing 100044 China)  
IGCT is a kind of high power semiconductor based on GTO structure, which achieves hard turn-off by the integrated gate circuit. During the turn-off period of IGCT, the anti-paralleled diode can be forward biased by the gate commutated circuit of IGCT, which can affect the turn-off performance of the IGCT. In this paper, the principle of IGCT is introduced firstly, and then the influence of the anti-paralleled diode on the turn-off performance of IGCT is analyzed and discussed. The experimental results verify the analysis.
【CateGory Index】: TN31
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