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《Equipment for Electronic Products Manufacturing》 2009-06
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Numerical Simulation of Directional Solidification Process for the Polycrystalline Silicon Ingot

CHEN Guohong, WANG Ziyuan, XIAO Yibo, QU Haibin (The 48th Research Institute of China Electronic Technology Group Company, Changsha 410111, China)  
In this paper, the temperature distribution of the crystal and melt for the polycrystalline sili- con ingot directional solidification process was discussed. And the temperature field of the solid-liquid interface was studied. The directional solidification process was visualized by the numerical simula- tion. A systematic theoretical analysis and experimental validation was provided for the effect about thermal field to polycrystalline silicon crystal growth.
【CateGory Index】: TN304.12
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