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《ELECTRONIC COMPONENTS $ MATERIALS》 2000-03
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Preparation of nanometer β-SiC crystal whisker by sol gel process.

ZHANG Hong tao 1,2 , XU Zhong yang 1(1 Department of Electronic Science and Technology, Huazhong University of Science and Technology, Wuhan Hubei 430074; 2 Department of Electricity Engineering and Computer Science, Hubei University of Polytec  
ELECTRONIC COMPONENTS MATERIALS (China), Vol 19, No 3, P 9 10,12 (Jun 2000) In Chinese Nanometer β SiC gel powder is made by sol gel process from two organic compounds. Nanometer β SiC crystal whisker of of high purity and low oxygen content is prepared by heat treating gel powder at 900~1300℃ in Ar atmosphere. The size is about 2~10 nm in diameter and 40~80 nm in length. β SiC content reaches 99 92%. The structure and size of the crystal whisker are observed by transmission electron microscopy (TEM) and Raman spectroscopy respectively. The effects of reaction conditions on the growth β SiC crystal whisker also are also discussed. (10 refs.)
【CateGory Index】: TN304.24
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【References】
Chinese Journal Full-text Database 5 Hits
1 GAO Hou-xiu,WANG Wei-na, CHEN Quan-shui, LIU Shuang-yi (Institute of Materials Science and Engineering. Tianjin University,Tianjin 300072, China; Departmenl of Material Science and Engineering, East China Technology Institute, Fuzhou 344000, China);Research direction of one dimensional nanostructures of silicon and silicon compound[J];Ordnance Material Science and Engineering;2005-05
2 ZHAO Jinga,LI Huai-xiangb(a.College of Physics and Electronics;b.College of Chemistry,Chemical Engineering and Materials Science,Shandong Normal University,Ji'nan 250014,China);Current Situation of Sol-Gel Technique for Preparation of Inorganic Nanometer Materials[J];Micronanoelectronic Technology;2005-11
3 WANG Jiang,LIU Xing-zhao,DENG Xin-wu(State Key Lab of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 610054,China);Growth of SiC Whiskers by VLS Mechanism[J];Micronanoelectronic Technology;2007-10
4 WU Yan-jun, CAI Bing-chu, ZHANG Ya-fei ,Wu Jian-sheng (State Key Lab of Thin Film and Micro-Fabrication, the Research Institute of Micro/Nano Meter Technology, Shanghai Jiaotong University, Shanghai 200030, China);New Progress on Manufacture Technology for SiC Nanorods[J];Electronic Components $ Materials;2003-09
5 ZHAI Rui1,YANG Guangyi1,WU Renbing1,CHEN Jianjun1,2,LIN Jing1,WU Lingling1,PAN Yi1(1.Department of Materials Science and Engineering,Zhejiang University,Hangzhou 310027,China;2.Center of Materials Engineering,Zhejiang University of Science and Technology,Hangzhou 310018,China);VLS growth of SiC whisker from FeSi flux[J];Acta Materiae Compositae Sinica;2007-05
【Co-citations】
Chinese Journal Full-text Database 6 Hits
1 LIU shui-gang,GAO wei (Department of Material Science and Engineering, University of Petroleum China,Beijing 102249);Study on the High Specific Area Silicon Carbide Used as Catalyst Supports[J];Shandong Ceramics;2004-01
2 DAI Changhong ZHAO Ru SONG Zuwei SHUI Li (Qingdao Institute of Architecture and Engineering ,Qingdao 266033;Shenyang Institute of Industry,Shenyang 110015);Techniques for Preparation of Nanometer Silicon Carbide Whiskers[J];Materials Review;2002-12
3 Li Shaochun Dai Changhong(Dept.of Environmental and Municipal Engineering,Qingdao Technological University ,Qingdao 266033);Status of the SiC Papticle,Whisker and Platelet Toughened Ceramic Composite[J];Bulletin of the Chinese Ceramic Society;2004-06
4 ZHANG Ying,JIANG Ming-xue,CUI Xi-wen,ZHANG Jun-zhan (School of Materials Science and Enginerr,Xi'an University of Architecture & Technology,Xi'an 710055,China);Preparation of SiC Whiskers by Low-temperature Decomposition of Silicon Nitride[J];Bulletin of the Chinese Ceramic Society;2009-01
5 WU Xufeng,LING Yiming(Department of Electronic Engineering,Southeast University,Nanjing 210018,China);PREPARATION OF SILICON CARBIDE NANORODS BY ARC DISCHARGE[J];Journal of the Chinese Ceramic Society;2006-10
6 CHEN Jing(Department of Physics and Electronics,Huaiyin Teachers College,Huaian Jiangsu 223001,China);Synthesis Methods of β-SiC Nanowires[J];Journal of Huaiyin Institute of Technology;2006-03
【Co-references】
Chinese Journal Full-text Database 10 Hits
1 Liao Mingyi Wei Xueli(Dalian University of Technology 116012) (Institute of Metal Research,Shenyang 110015);STUDY ON PP REINFORCED WITH MAGNESIUM HYDROXIDE SULFATE HYDRATE[J];Engineering Plastics Application;2000-01
2 Gao Houxiu,Cui Zhenduo,Yang Xianjin,Han Yajing;NON-LINEAR OSCILLATION PATTERN ON SURFACE OF 20Cr-Mn-Ti STEEL[J];ORDNANCE MATERIAL SCIENCE AND ENGINEERING;2000-04
3 Liu ling,Kang Maoqing,Wang Xinkui;RESEARCH ON SURFACE CHEMISTRY AND MECHANICAL PROPERTIES OF SiC WHISKER[J];ORDNANCE MATERIAL SCIENCE AND ENGINEERING;2000-05
4 ChEN Quan - shui, GAO Hou - xiu, L1U Shuang - ji, ZhANG Gui - jie, YANG Yu - qin (1. School of Material Science and Engineering, Tianjin University, Tianjin 300072; 2. Department of Material Science and Engineering, East China Technology Institute, Fuzhou Jiangxi 344000);Preparation and characterization of one dimension nano - structure of Cu - Zn - Al alloy[J];Ordnance Material Science and Engineering;2004-04
5 JIANG Yan-lan,LIANG Xiao-rui (Naval Aeronautic Engineering Academy,Yantai 264001,China);Properties and applications of nanocrystalline ceramics[J];Ordnance Material Science and Engineering;2008-05
6 Song Dengyuan (Dept. of Electron. & Infom. Eng., Hebei Uni., Baoding 071002);Recent Advances on Heteroepitaxial Growth of GaN Films[J];SEMICONDUCTOR OPTOELECTRONICS;1994-04
7 YUAN Ming wen (Hebei Semiconductor Research Institute,National Key Laboratory of ASIC,Shijiazhuang 050051,China);SiC materials and devices[J];Semiconductor Information;2001-02
8 Xu Linhua1,Li Xiangyin1,Shi Linxing1,and Shen Hua2(1 Department of Applied Physics,Nanjing University of Science and Technology,Nanjing 210094,China)(2 Institute of Electronic Engineering and Photo-Electric Technology,Nanjing University of Science and Technology,Nanjing 210094,China);Effect of Annealing Temperature on ZnO Thin Film Grown on a TiO_2 Buffer Layer[J];Journal of Semiconductors;2008-10
9 Yang Xiuchun 1,2 , Han Gaorong 2, Zhang Xiaobin 2, Ding Zishang 2(1 Department of Physical Chemistry, University of Science and Technology Beijing, Beijing\ 100083) (2 Department of Materials Science and Engineering, Zhejiang University, Hangz;A New Characteristic of SiC Nanometer Powder ——Blue and Violet Emission[J];CHINESE JOURNAL OF SEMICONDUCTORS;1998-06
10 Zhao Cheng et al;The deposition and application of PCVD-TiC coatings[J];Surface Technology;1998-02
【Secondary References】
Chinese Journal Full-text Database 2 Hits
1 GAO Hou-xiu,WANG Wei-na, CHEN Quan-shui, LIU Shuang-yi (Institute of Materials Science and Engineering. Tianjin University,Tianjin 300072, China; Departmenl of Material Science and Engineering, East China Technology Institute, Fuzhou 344000, China);Research direction of one dimensional nanostructures of silicon and silicon compound[J];Ordnance Material Science and Engineering;2005-05
2 LIU Yuan-long,HU Ji-bao,XIE Yu,FU Mao-sheng(School of Environmental and Chemical Engineering,Nanchang Hangkong University,Nanchang 330063,China);Study on preparation and properties of doped Al SnO_2 gas-sensitive materials[J];Electronic Components and Materials;2008-03
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