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《Electronic Components $ Materials》 2004-05
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Deposition of Dielectric Film and Test of It's Electric Performance

CUI Hong-ling;YANG Bang-chao;DU Xiao-song;TENG Lin;ZHOU Hong-ren College of Microelectronics and Solid State Electronice of University of Electronic Science and Technology,Chengdu 610054,China  
With Al_2O_3 film deposited by electron-beam evaporation as an example, the technique of dielectric film was introduced. In different annealing factors, electric performance of the Al_2O_3 film was tested and analyzed, which it is excellent to turn the heat handles term: anneaed at 400℃ for 3h in O_2. Along with SEM surface analysis, it was turned the thin film of Al_2O_3 than the Al_2O_3 of a material is fine.
【Fund】: 电子预研基金(AW030412)
【CateGory Index】: TP212
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