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《Electronic Components $ Materials》 2005-08
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Technology Study of AZO Thin Films Made by Magnetron Sputtering

ZHANG Li-wei1,2, LU Jing-xiao1, DUAN Qi-liang1, WANG Hai-yan1, LI Rui1, JIN Rui-min1, WANG Hong-juan1, ZHANG Yu-xiang1 (1. Ministry of Education Key Laboratory of Material Physics, Zhengzhou University, Zhengzhou 450052, China; 2. Xinxiang Teachers College, Xinxiang 453000, China)  
Resorting to XRD, spectrometer and four-probe devices, the influence of preparation atmosphere, annealing temperature and annealing environment on the structural and photoelectric properties of AZO films was researched. The results indicate that the transmittance of thin films reaches the maximum, 95.33%, when the cubic content ratio of oxygen to argon is 2:1. Anneal is in favor of the crystallization of AZO films. The resistance of thin films decreases with annealing temperatures increasing under 400℃. Whereas above 400℃, with annealing temperatures increasing, the resistance increases in air furnace but changes less in the vacuum furnace.
【CateGory Index】: TB383
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