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《Electronic Components and Materials》 2007-07
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Influence of thickness and oxygen content of ITO thin films on its structure and properties

XIN Rong-sheng1, LIN Yu2 (1. College of Material Science and Engineering, Zhengzhou University, Zhengzhou 450052, China; 2. Department of Chemistry, Henan Education Institute, Zhengzhou 450014, China)  
ITO transparent semiconducting films were deposited onto the glass substrates by DC magnetron sputtering method. The film structure related to film thickness and oxygen content was determined by X-ray diffraction. The resistivity and transmissivity changed with film thickness and oxygen content individually were also measured. The ITO transparent semiconducting films with well crystallinity, low resistivity and high transmissivity were obtained, which deposited by processing of low flow ratio O2/Ar(1/40) and film thickness above 70 nm. The ITO film resistivity is 1.8×10–4 ?·cm and visible light transmissivity is beyond 80 %.
【Fund】: 河南省科技攻关项目(0224380029)
【CateGory Index】: TN304
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