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《Electronic Components and Materials》 2009-11
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Effect of vacuum annealing temperature on properties of GZO/Ag/GZO three-layer films

XIN Yanqing,JIANG Lili,SONG Shumei,YANG Tianlin,LI Yanhui (Department of Space Science and Applied Physics,Shandong University at Weihai,Weihai 264209,Shandong Province,China)  
GZO/Ag/GZO three-layer films were prepared on glass substrates by radio frequency magnetron sputtering of GZO layers and ion beam sputtering of Ag layers at room temperature. The effects of vacuum annealing temperature on the structural,optical and electrical properties of GZO/Ag/GZO three-layer films were investigated. The results show that the structure of Ag layer is significantly improved with the increasing of annealing temperature,but the crystallinity of GZO layers is affected by diffusion of Ag. After annealing treatment at 350℃ ,the resistivity is decreased from 8.0×10–5 Ω·cm to 4.0×10–5 Ω·cm,and an average transmittance of 92.63% in the visible range of GZO/Ag/GZO films is obtained.
【Fund】: 国家自然科学基金资助项目(No.60676041);; 山东省自然科学基金资助项目(No.Y2008A37)
【CateGory Index】: TG156.2
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