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《Electronic Components and Materials》 2015-08
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Bi_2O_3 doping on properties of negative temperature coefficient resistance

LIU Yanru;CAO Quanxi;ZHANG Jiyan;LI Jianwei;School of Advanced Materials and Nano Technology, Xidian University;  
Doped with Bi2O3 whose percentage is mass fraction of x%(x=0, 0.5, 1, 2.4, 4.8, 7), the microstructure and electrical properties of the Cu-Mn-Ca based negative temperature coefficient resistance(NTCR) made by solid state reaction method were investigated. It is found that Bi2O3 exists in the grain boundary, the presence of which enlarges the grain size of the components and has a great effect on the porosity of the components. The introduction of Bi2O3 also reduces the room temperature resistivity of the components, and broadens the application temperature range of the components. As the Bi2O3 content is mass fraction of 4.8%, the components have a low room temperature resistivity(6 ?·cm) and a wide application temperature range(from room temperature to 240 ℃).
【CateGory Index】: TN37
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【Citations】
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