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Wide Bandgap Diamond Semiconductor

Li Faning,Zhang Heming,Dai Xianying,Zhu Guoliang,Lv Yi (Research Inst. of Microelectronics, Xidian Univ., Xi’an 710071, China)  
This paper discusses in detail the current research, the advantages and the application of diamond semiconductors. An analysis of and comparison among different diamond fabricating methods shows that microwave-plasma chemical-vapor-deposition (MPCVD) is the most desirable at present. The characteristics and the advantages is discussed of this method, which is capable of improve the diamond growth rate and quality with proper argon atmosphere and negative substrate bias voltage. An analysis is also given of the mechanism of the diamond heterogeneous nucleation. The paper concludes with a discursion of the key issues and trends of the diamond semiconductor technology.
【CateGory Index】: TN304.18
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