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Wide Bandgap Diamond Semiconductor

Li Faning,Zhang Heming,Dai Xianying,Zhu Guoliang,Lv Yi (Research Inst. of Microelectronics, Xidian Univ., Xi’an 710071, China)  
This paper discusses in detail the current research, the advantages and the application of diamond semiconductors. An analysis of and comparison among different diamond fabricating methods shows that microwave-plasma chemical-vapor-deposition (MPCVD) is the most desirable at present. The characteristics and the advantages is discussed of this method, which is capable of improve the diamond growth rate and quality with proper argon atmosphere and negative substrate bias voltage. An analysis is also given of the mechanism of the diamond heterogeneous nucleation. The paper concludes with a discursion of the key issues and trends of the diamond semiconductor technology.
【CateGory Index】: TN304.18
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1 LI Hesheng 1,2), GONG Jianhong 1,2), ZHENG Kefang 1,2), LI Musen 1,2)1) Materials Science and Engineering School, Shandong University, Jinan 250061, China 2) Shandong Engineering Research Centre for Superhard Materials, Zoucheng 273500, China;Synthesizing Ⅱb type diamond single crystal from an Fe-Ni-C-B system at high temperature and high pressure[J];Journal of University of Science and Technology Beijing;2007-02
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Chinese Journal Full-text Database 4 Hits
1 Qi Haiyan1,2 Li Hesheng3 Qi Yongxin3 Zhang Yuanpei3(1.College of Electromechanical Engineering,Qingdao University of Science &Technology,Qingdao 266042,China)(2.Department of Electromechanical Engineering,Laiwu Vocational & Technical College, Laiwu 271100,China)(3.School of Material Science and Engineering,Shandong University,Jinan 250061,China);Effect of multiple boron sources on boron-doped diamond single crystals[J];Diamond & Abrasives Engineering;2009-02
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