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《Journal of Electron Devices》 2001-02
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The Expression of Optimum Doping Content of Stannic Oxide Thin Films

FAN Zhixin, CHEN Jiulin, SUN Yicai (Department of Applied Physics, Hebei University of Technology, Tianjin, 300130 P.R. China)  
The stannic oxide thin films have numerous applications. The problems of optimum doping content for antimony doped and fluorine doped stannic oxide thin films are discussed in this paper. The model has been set up and the theoretical expression is given, the optimum doping content are obtained and they are in accordance with the experimental results.
【CateGory Index】: TN304.2
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