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《Journal of Electron Devices》 2002-03
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A Novel Analytic Model on Surface Voltage and Electric Field of the Drift of Offset-Gate MOS

SUN Weifeng, WU Jianhui, LU Shengli, SHI Longxing (Southeast University National ASIC System Engineering Center, Nanjing, 210096 P.R.China)  
A novel analytic model on the relationship about the surface voltage and the PN junction electric field with the ion dose in the drift of gate off MOS is presented. The equations are gained by mathematics process. The variety on them can be distinctly seen from the graphs. Some ways to improve breakdown voltage are also discussed.
【CateGory Index】: TN386.1
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6 Guo Yufeng,Zhang Bo,Mao Ping,Li Zhaoji,and Liu Quanwang (IC Design Center,University of Electronic Science & Technology,Chengdu 610054,China);Unified Breakdown Model of SOI RESURF Device with Uniform/Step/Linear Doping Profile[J];Chinese Journal of Semiconductors;2005-02
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9 CHEN Yong-zhen, NING Wu, MENG Li-nan(Liaoning Institute of Technology, Jinzhou 121001, China);The Switching Characteristics of Biplar Static Inductive Transistor[J];Power Electronics;2003-06
10 ZHU Min, WANG Dong-xing, CHE Ren-xin, XUE Yan-bing, SHI Wei-guo, KUNIAKI Tanaka (Dept. of Electrical Engineering, Dalian Railway Institute, Dalian 116028, China; Chiba University, Japan);Study and Fabricating of Organic Semiconductor Film Transistor[J];Journal of Dalian Railway Institute;2001-01
【Secondary References】
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1 YANG Wan-qing1,LI Bing1,HAN Guang-tao2(1. IC college,Southeast University,Nanjing 210096,China;2. CSMC Technologies Corporation,Wuxi 214061,China);Device Research on the 20V N-CDMOS with the Standard 5V CMOS Process[J];Electronics & Packaging;2008-02
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