Full-Text Search:
Home|Journal Papers|About CNKI|User Service|FAQ|Contact Us|中文
《Journal of Electron Devices》 2002-03
Add to Favorite Get Latest Update

A Novel Analytic Model on Surface Voltage and Electric Field of the Drift of Offset-Gate MOS

SUN Weifeng, WU Jianhui, LU Shengli, SHI Longxing (Southeast University National ASIC System Engineering Center, Nanjing, 210096 P.R.China)  
A novel analytic model on the relationship about the surface voltage and the PN junction electric field with the ion dose in the drift of gate off MOS is presented. The equations are gained by mathematics process. The variety on them can be distinctly seen from the graphs. Some ways to improve breakdown voltage are also discussed.
【CateGory Index】: TN386.1
Download(CAJ format) Download(PDF format)
CAJViewer7.0 supports all the CNKI file formats; AdobeReader only supports the PDF format.
【References】
Chinese Journal Full-text Database 2 Hits
1 LU Shengli SUN Weifeng YI Yangbo WU Yuping(National ASIC System Engineering Research Center, Southeast University, Nanjing, 210096, CHN);Research on the 500 V Bulk-Silicon N-LDMOS[J];Research & Progress of Solid State Electronics;2005-04
2 LUO Xiang-dong,SUN Ling,CHEN Hai-jin,LIU Yan-hua,SUN Hai-yan, XU Wei-wei,TAO Tao,CHENG Meng-zhang,JING Wei-ping(Jiangsu Key Laboratory of ASIC Design,Nantong University,Nantong 226019,China);Research on the 110 V Bulk-Silicon LDMOS[J];Journal of Nantong University(Natural Science Edition);2008-02
【Co-citations】
Chinese Journal Full-text Database 10 Hits
1 Electronice Engineering Department Anhiu University,Hefei;Temperature Dependence of On-state Resistance of A High Voltage LDMOS at Very High Temperatures[J];Journal of Anhui Vocational College of Electrontcs & Information Technology;2002-02
2 CHEN Jun-ning,KE Dao-ming,ZHU De-zhi (Electronic Engineering Department ,Anhui University, Hefei 230026,China);Characteristic of on-state resistance of a high voltage LDMOS at very high temperatures[J];Journal of Anhui University(Natural Sciences);2002-04
3 WU Xiu-long~1, MENG Jian~1, KE Dao-ming~1, CHEN Jun-ning~1,SHI Long-xing~2, SUN Wei-feng~2 (1.Department of Electronic Engineering and Information Science, Anhui University, Hefei230039,China; 2.National ASIC System Engineering Research Center, Southeast University, Nanjing210096,China);Analysis of LDMOS breakdown voltage after using field plate[J];Journal of Anhui University(Natural Sciences);2004-01
4 GAO Shan, MENG Jian,CHEN Jun-ning, DING hao (Department of Electronic Science and Technology, Anhui University, Hefei 230039, China);The analysis in linear region of n-well LDMOS voltage- current characteristic[J];Journal of Anhui University(Natural Sciences);2005-02
5 DING Feng,KE Dao-ming,CHEN Jun-ing,YE Yun-fei,LIU Lei,XU Tai-long(School of Electronic and Technology,Anhui University,Hefei 230039,China);An optimization analysis of threshold voltage temperature coefficient for power LDMOSTs[J];Journal of Anhui University(Natural Sciences);2006-01
6 YAO Feng,HE Qi-xin,FANG Shao-hua Dept.Inform.& Elec.Engineer.,Institute of Microelectronics Technology and System Design,Zhejiang University.Hangzhou 310027,China;Analysis for a New Low-Voltage Power MOSFET Structure[J];Semiconductor Technology;2005-11
7 Bai Yunxia,Guo Chunsheng,Feng Shiwei,Meng Haijie,Lü Changzhi,Li Zhiguo (School of Electronic Information & Control Engineering,Beijing University of Technology,Beijing 100124,China);Express Reliability Evaluation of Power VDMOS Based on Arrhenius Model[J];Semiconductor Technology;2009-01
8 Wang Cuixia1,Xu Weisheng1,Hshieh Fwuluan2,Chen Ju2,Wu Qidi1(1.Tongji University,Shanghai 200092,China ;2.Force MOS Technology Co.,Ltd.,Taipei 000300,China);Research on Trench MOSFET for High-Frequent Control Switch[J];Semiconductor Technology;2009-03
9 Zhao Lixia1,2,Yuan zhaogeng1,Zhang Heming2 (1.Hebei Poshing Electronics Technology Co.,Ltd.,Shijiazhuang 050200,China;2.School of Microelectronics,Xidian University,Xi'an 710071,China);Design of EPI Parameter for High Voltage VDMOS[J];Semiconductor Technology;2009-04
10 YUN Zhen-xin 1,DAI Hong-bo 2 (1.State owned No.970 Factory,Chengdu 610051,China) (2.The 13th Electronic Research Institute,Shijiazhuang 050051,China);RF LDMOS power transistor and its applications[J];Semiconductor Information;2001-03
【Co-references】
Chinese Journal Full-text Database 10 Hits
1 CHEN Zhi-yong1,HUANG Qi-yu2,GONG Da-wei2 (1.School of Microelectronics,Shanghai Jiaotong University, Shanghai 200030,China ; 2. Advanced Semiconductor Manfacturing Corp.of Shanghai,Shanghai 200233, China);Overview of BCD Process[J];Semiconductor Technology;2006-09
2 JI Xiu-ming,SONG Zhe-hao (Semiconductor Company of Changzhou,Changzhou 213000,China);Design of JFET[J];Semiconductor Information;2001-04
3 Tang Benqi 1,2 , Luo Jinsheng\+1(1\ Xi'an Jiaotong University, Xi'an\ 710049) Geng Bin\+2, Li Guozheng\+2(2\ Northwest Institute of Nuclear Technology, Xi'an\ 710024);Optimal Analysis of New Structure of Lateral High\|Voltage Device[J];CHINESE JOURNAL OF SEMICONDUCTORS;1999-09
4 Wang Dongxing 1,Zhu Min 1,Kudo Kazuhiro 2 and Tanaka Kuniaki 2(1 Department of Electrical Engineering,Dalian Railway Institute,Dalian 116028,China) (2 Japan Chiba University,Chiba,Japan);Fabrication of Organic Semiconductor Thin Film Transistor[J];Chinese Journal of Semiconductors;2002-06
5 Sun Zhilin,Sun Weifeng,Yi Yangbo and Lu Shengli(National ASIC System Engineering Research Center,Southeast University,Nanjing 210096,China)[WT5”HZ];Study of High Reliability P-LDMOS[J];Chinese Journal of Semiconductors;2004-12
6 Guo Yufeng,Zhang Bo,Mao Ping,Li Zhaoji,and Liu Quanwang (IC Design Center,University of Electronic Science & Technology,Chengdu 610054,China);Unified Breakdown Model of SOI RESURF Device with Uniform/Step/Linear Doping Profile[J];Chinese Journal of Semiconductors;2005-02
7 Meng Jian~1,Gao Shan~1,Chen Junning~1,Ke Daoming~1,Sun Weifeng~2,Shi Longxing~2,and Xu Chao~1(1 School of Electronic Science and Technology,Anhui University,Hefei 230039,China)(2 National ASIC System Engineering Research Center,Southeast University,Nanjing 210096,China);An Analytical Model of a LDMOS On-Resistance Using a Well as a High Resistance Drift Region[J];Chinese Journal of Semiconductors;2005-10
8 ;The New Developing Tendency of Power Electronics[J];Power Electronics;1996-04
9 CHEN Yong-zhen, NING Wu, MENG Li-nan(Liaoning Institute of Technology, Jinzhou 121001, China);The Switching Characteristics of Biplar Static Inductive Transistor[J];Power Electronics;2003-06
10 ZHU Min, WANG Dong-xing, CHE Ren-xin, XUE Yan-bing, SHI Wei-guo, KUNIAKI Tanaka (Dept. of Electrical Engineering, Dalian Railway Institute, Dalian 116028, China; Chiba University, Japan);Study and Fabricating of Organic Semiconductor Film Transistor[J];Journal of Dalian Railway Institute;2001-01
【Secondary References】
Chinese Journal Full-text Database 2 Hits
1 YANG Wan-qing1,LI Bing1,HAN Guang-tao2(1. IC college,Southeast University,Nanjing 210096,China;2. CSMC Technologies Corporation,Wuxi 214061,China);Device Research on the 20V N-CDMOS with the Standard 5V CMOS Process[J];Electronics & Packaging;2008-02
2 LI Dong-liang,SUN Wei-feng(Integrated Circuit College,Southeast University,NanJing,210096 China);Research on the 500 V Bulk-Silicon N-LDMOS[J];Chinese Journal of Electron Devices;2008-02
©2006 Tsinghua Tongfang Knowledge Network Technology Co., Ltd.(Beijing)(TTKN) All rights reserved