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《Journal of Electron Devices》 2005-03
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Study of 1/f Noise in GaAlAs IREDs

BAO Jun-lin, ZHUANG Yi-qi, DU Lei,MA Zhong-fa, LI Wei-hua, WAN Chang-xing 1.Microelectronics Institute, Xidian University, Xi'an 710071, China; 2.Key Lab of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Xi′an 710071, China  
1/f noise in GaAlAs infrared ray emitting diodes (IREDs) was measured in a widely bias range. Experimental results demonstrate that the magnitude of 1/f noise is in directly proportional to the power of the currentIγ_F, at small currentsγ≈1, at large currents γ≈2. A model for 1/f noise in GaAlAs IRED is developed and the results obtained agree well with experimental results. Based on this model, it is discussed that at small currents, 1/f noise in GaAlAs infrared ray emitting diodes comes from trapping and detrapping process between bulk defects and carriers, while, at large currents, it is due to fluctuations in the surface recombination velocity induced by the surface potential, which is modulated by oxide traps near the space-charge region. The work done above provides an experimental and theoretical basis for 1/f noise to be used in characterizing reliability of GaAlAs IREDs
【Fund】: 国家自然科学基金资助(60276028);; 国防预研基金资助(51411040601DZ014);; 国防科技重点实验室基金资助(51433030103DZ01)
【CateGory Index】: TN312.8
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