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《Acta Electronica Sinica》 2002-02
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Linearly-Graded Drift Region-Doped (LGDRD) RESURF LDMOS with an Improved Trade-off between the Breakdown Voltage and On-Resistance

HE Jin 1,ZHANG Xing 1,HUANG Ru 1,LING Xiao yun 2,HE Zhe hong 2 (1 Institute of Microelectronics,Peking University,Beijing 100871,China; 2 Institute of Application Electrical Technology,Mianyang,Sichuan 646300)  
A linearly graded drift region doped LDMOS transistor is evaluated in this paper.The characteristics of the LDMOS with a linearly graded drift region doped profile have been demonstrated by the 2D semiconductor simulator MEDICI and verified by our experimental results.It has been shown that the reduction of the on resistance by 30% from 7 7mΩ·cm 2 to 5 mΩ·cm 2 in the on state and increase of the breakdown voltage by a factor of 1 5 from 178V to 234V in the off state are obtained for the presented LDMOS structure when compared with those of the optimized conventional RESURF device.
【CateGory Index】: TN32
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