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《Acta Electronica Sinica》 2002-02
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Linearly-Graded Drift Region-Doped (LGDRD) RESURF LDMOS with an Improved Trade-off between the Breakdown Voltage and On-Resistance

HE Jin 1,ZHANG Xing 1,HUANG Ru 1,LING Xiao yun 2,HE Zhe hong 2 (1 Institute of Microelectronics,Peking University,Beijing 100871,China; 2 Institute of Application Electrical Technology,Mianyang,Sichuan 646300)  
A linearly graded drift region doped LDMOS transistor is evaluated in this paper.The characteristics of the LDMOS with a linearly graded drift region doped profile have been demonstrated by the 2D semiconductor simulator MEDICI and verified by our experimental results.It has been shown that the reduction of the on resistance by 30% from 7 7mΩ·cm 2 to 5 mΩ·cm 2 in the on state and increase of the breakdown voltage by a factor of 1 5 from 178V to 234V in the off state are obtained for the presented LDMOS structure when compared with those of the optimized conventional RESURF device.
【CateGory Index】: TN32
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【References】
Chinese Journal Full-text Database 1 Hits
1 ;Progress in the Research of R_(ON) for power MOSFET[J];Power Electronics;2007-04
【Co-references】
Chinese Journal Full-text Database 10 Hits
1 KE Dao-ming,CHEN Jun-ning DAI Yue-hua,XUAN Chang-lin,DUAN Yun-shen (Dept.of Electronic Engineering and Information Science of Anhui University,Hefei 230039,China);A Modification of One Dimension MOST Model for Non-uniformly Doped Substrate[J];JOURNAL OF ANHUI UNIVERSITY(NATURAL SCIENCES);2000-01
2 CHEN Jun-ning,KE Dao-ming,ZHU De-zhi (Electronic Engineering Department ,Anhui University, Hefei 230026,China);Characteristic of on-state resistance of a high voltage LDMOS at very high temperatures[J];Journal of Anhui University(Natural Sciences);2002-04
3 WU Xiu-long~1, MENG Jian~1, KE Dao-ming~1, CHEN Jun-ning~1,SHI Long-xing~2, SUN Wei-feng~2 (1.Department of Electronic Engineering and Information Science, Anhui University, Hefei230039,China; 2.National ASIC System Engineering Research Center, Southeast University, Nanjing210096,China);Analysis of LDMOS breakdown voltage after using field plate[J];Journal of Anhui University(Natural Sciences);2004-01
4 GAO Shan, MENG Jian,CHEN Jun-ning, DING hao (Department of Electronic Science and Technology, Anhui University, Hefei 230039, China);The analysis in linear region of n-well LDMOS voltage- current characteristic[J];Journal of Anhui University(Natural Sciences);2005-02
5 WU Xiu-long, CHEN Jun-ning, KE Dao-ming, MENG Jian (Institute of Electronic Science and Technology , Anhui University , Hefei 230039 , China);Analysis of High Voltage LDMOS Power Dissipation[J];Semiconductor Technology;2006-10
6 Li Xiuqing (The 13th Electronic Research Institute,Shijiazhuang 050051);The Third Generation of Wireless Communication Systems and Related Semiconductor Technologies[J];SEMICONDUCTOR INFORMATION;2000-05
7 YUN Zhen-xin 1,DAI Hong-bo 2 (1.State owned No.970 Factory,Chengdu 610051,China) (2.The 13th Electronic Research Institute,Shijiazhuang 050051,China);RF LDMOS power transistor and its applications[J];Semiconductor Information;2001-03
8 LI Jing (The 13th Electronic Research Institute,Shijiazhuang 050051,China);LDMOS device for the third generation mobile communication systems[J];Semiconductor Information;2001-05
9 Tang Benqi 1,2 , Luo Jinsheng\+1(1\ Xi'an Jiaotong University, Xi'an\ 710049) Geng Bin\+2, Li Guozheng\+2(2\ Northwest Institute of Nuclear Technology, Xi'an\ 710024);Optimal Analysis of New Structure of Lateral High\|Voltage Device[J];CHINESE JOURNAL OF SEMICONDUCTORS;1999-09
10 Lei Yu,Fang Jian,Zhang Bo,and Li Zhaoji(Institute of Microelectronics,University of Electronic Science and Technology of China,Chengdu 610054,China);A High Voltage LDMOS Switch Circuit with a D/A Driver in SOI Material[J];Chinese Journal of Semiconductors;2005-06
【Secondary References】
Chinese Journal Full-text Database 4 Hits
1 WANG Ying,CHENG Chao,HU Hai-fan(College of Information and Communication Engineering,Harbin Engineering University,Harbin 150001,China);Analysis of Power Trench MOSFET With Lower On-resistance[J];Journal of Beijing University of Technology;2011-03
2 CHEN Yu-lin,XU Jun,MA Xiao-jun,LI Kun (Department of Control Engineering,Academy of Armored Force Engineering,Beijing 100072));Study on Real-time Simulation of the Insulated-gate Bipolar Transistor(IGBT)[J];Electric Switchgear;2010-05
3 ZHANG Jie1,LI Wenshi11.School of Electronics and Information,Suzhou University, Suzhou Jiangsu 215021, China2.The country lab of ASIC, Dongnan University, Nanjing Jiangsu 210096, China;Rapid Design Method of Flyback Switching Converter[J];Chinese Journal of Electron Devices;2009-03
4 ZHANG Xin-xi, CHEN Yu-lin, XU Jun, NIU Shu-lai(Department of Control Engineering, Academy of Armored Force Engineering, Beijing 100072, China);Design of Real-time Simulation System for Switching Characteristic of IGBT Based on SOPC[J];Journal of Academy of Armored Force Engineering;2010-05
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