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《Acta Electronica Sinica》 2003-07
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Numerical Simulation of Electric and Thermal Characteristic in ULSI Copper-Filled Inteconnect Via Hole

LI Zhi-guo,LU Zhen-jun (The School of Electronics and Control Engineering,Beijing Polytechnic University,Beijing 100022,China)  
Three-dimension finite element modeling has been used to simulate and compare the current density,temperature and the gradients of distribution in Copper-filled via hole structure.To the same barrier material,the via hole with different slope has been simulated.The result of the simulation shows that optimizing the slope of the via hole and selecting the barrier material will improved the interconnect reliabiling.All these provide valuable reference to the design of the via hole.
【Fund】: 国家自然科学基金 (No .699360 2 0 )
【CateGory Index】: TN915.6
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【References】
Chinese Journal Full-text Database 1 Hits
1 PEI Song-wei, HUANG He, HE Xu-shu, BAO Su-su (School of Computer, South China Normal University, Guangzhou 510631, China);Analysis of Hot Spots in ULSI Interconnect and Via Systems[J];Microelectronics & Computer;2007-04
【Co-references】
Chinese Journal Full-text Database 9 Hits
1 RUAN Gang 1 and XIAO Xia 2 (1 ASIC and System State Key Laboratory,Fudan University,Shanghai 200433,China) (2 Center of Microtechnology,Technical University of Chemnitz,Chemnitz D-09107 ,Germany);Simulation of Thermal Performance of ULSI Inte rconnect System[J];Chinese Journal of Semiconductors;2001-08
2 Wang Nailong and Zhou Runde(Institute of Microelectronics,Tsinghua University,Beijing 100084,China);A Novel Analytical Thermal Model for Temperature Estimation of Multilevel ULSI Interconnects[J];Chinese Journal of Semiconductors;2004-11
3 Xiao Xia~ 1, ,Yao Suying~1,and Ruan Gang~2(1 Center of ASIC,School of Electronic and Information Engineering,Tianjin University,Tianjin 300072,China)(2 School of Information Science and Engineering,Fudan University,Shanghai 200433,China);Influence of Interconnection Configuration on Thermal Dissipation of ULSI Interconnect Systems[J];Chinese Journal of Semiconductors;2006-03
4 HE Xu-shu,HUANG He,PEI Song-wei,BAO Su-su(School of Computer,South China Normal University,Guangzhou 510631,China);THERMAL ANALYSIS OF MULTILEVEL METAL ROUTING IN 0.1 μm ULSI TECHNOLOGY[J];Journal of South China Normal University(Natural Science Edition);2006-03
5 PEI Song-wei,HUANG He,HE Xu-shu,BAO Su-su(School of Computer,South China Normal University,Guangzhou,Guangdong 510631,P.R.China);Effects of Via on Temperature Distribution of Metal Wires[J];Microelectronics;2006-04
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7 LIU Ying, WENG Jian-jie, RONG Meng-tian(Dept. of Electronic Eng., Shanghai Jiaotong Univ, Shanghai 200030 China);Optimizate VLSI Wire by Modified Active Set Method[J];Microelectronics & Computer;2004-12
8 PEI Song-wei, HUANG He, HE Xu-shu, BAO Su-su (School of Computer, South China Normal University, Guangzhou 510631, China);Analysis of Hot Spots in ULSI Interconnect and Via Systems[J];Microelectronics & Computer;2007-04
9 HAO Yue~1,SHAO Bo-tao~1,MA Xiao-hua~1,HAN Xiao-liang~1,WANG Jian-ping~2(1. Research Inst. of Microelectronics, Xidian Univ., Xi′an 710071, China; 2. SMIC, Shanghai 201203, China);State of the arts Cu interconnect and its reliability in ULSI[J];Journal of Xidian University;2005-04
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