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《CHINESE JOURNAL OF LUMINESCENCE》 2000-03
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Infrared Light-Emitting Devices Based on Organic Erbium Complexes

HONG Zi ruo 1, LIANG Chun jun 1, ZHAO Dan 1, LI Rui gang 2, LI Wen lian \{1,2\} (1 Laboratory of Excifted States Processes,Chinese Academy of Sciences,Changchun 130021,China; 2 Changchun Institute of Optics, Fine Mechanics and Physics,Chine  
Unique luminescent properties of rare earth ions in inorganic and organic matrices have been the subject of many studies for many years, including both photoluminescence and electroluminescence. The Er 3+ ion has a sharp luminescence centered at 1 530nm due to an intra 4f shell transition between the first excited state ( 4I 13/2 ) and the ground state ( 4I 15/2 ). Considering the potential use of trivalent erbium complexes as IR emitting materials for optical quartz fiber communication and laser application, we concentrated in organic electroluminescence (EL) from Er 3+ in IR range. Except for notable advantages of current excitation over photo excitation, probability of realizing electric pump laser from Er 3+ , which is a usual emitting center in inorganic laser crystals and glasses, is another attractive purpose of this study. Er(DBM) 3bath and several kinds of other Er complexes were synthesized according to traditional method in our lab. Bilayer and trilayer EL devices based on Er(DBM) 3bath were fabricated. Two intense bands at 1530nm and 977nm originated from trivalent Er 3+ ion were observed under a low DC voltage for the first time. Individual organic films and alloy cathode of EL devices were deposited onto indium tin oxide glass substrate successively by thermal evaporation in a vacuum chamber at 5×10 -4 Pa. The made up devices were encapsulated in dried nitrogen. IR(700~2000nm) and visible (400~750nm) spectra were measured by a Biorad PL 9000FT spectrometer and a Hitach 4000 fluorescence spectrophotometer at room temperature, respectively. From ITO/TPD(30nm)/Er(DBM) 3bath doped TPD(30nm) (about 1∶1)/Er(DBM) 3bath(60nm)/Mg∶Ag(150nm) (device I), intense emitting band locating at 1530 nm corresponding to 4I 13/2 → 4I 15/2 transitions of Er 3+ was observed. Almost pure emissions from Er 3+ were obtained including a weaker peak at 977nm, which was originated from 4I 11/2 → 4I 15/2 transition. IR emissions were accompanied by visible emitting for both bilayer and trilayer devices. Emitting spectra of the two types of devices were quite different. This indicates that radiative decay of the lowest excited state of ligand occurred through not only f f transition of Er 3+ ion but also other ways.
【Fund】: 国家“8 63”基金资助项目 !( 863 -715 -0 0 2 -0 3 1)
【CateGory Index】: TN383.1
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