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《Chinese Journal of Luminescence》 2001-02
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MOCVD Growth of ZnO Films and Their Luminescence Properties

FU Zhu xi 1,2 , LIN Bi xia 2, ZHU Jie 2, JIA Yun bo 1, LIU Li ping 2, PENG Xiao tao 2 (1. Structure Research Laboratory, University of Science and Technology of China; 2. Department of Physics, University of Science and Technology of  
ZnO films were deposited on Si substrates by MOCVD.Two sets of MO sources were used here.One was Zn(C 2H 5) 2(DEZ) and CO 2,another was Zn(CH 3) 2(DMZ) and H 2O.The carrier gas was nitrogen instead of hydrogen,in order to avoid ZnO decomposed in hydrogen at high temperature.During growth process,the pressure in reactor chamber was 6000Pa and atmosphere,respectively.The growth temperature employed in the experiments were 500,550,600,650 and 700℃.Growth time was 1 hour for all samples.After growth,every sample was cut to two parts.One of them was annealed in air at 900℃ for 1 hour.The structures and photoluminescence properties at room temperature of the as deposited and annealed samples were investigated.It was found that the structure and photoluminescence properties of the ZnO films markedly depends on the MO source,growth pressure and temperature.Only low growth pressure is useful for deposition of ZnO films.As using Zn(C 2H 5) 2 and CO 2,the films deposited at 500℃ are all c axis oriented .When the growth temperature increases,the ZnO(002)diffraction peak of the samples became low and low and other ZnO diffraction peaks increase.That means the orientation of crystal grains in the films tends bad,and the film becomes polycrystal.When the growth temperature was at 650℃,not only ZnO but also ZnO 2 peaks appeared in XRD patterns.These properties exhibit more remarkable after samples were annealed .As the growth temperature was at 700℃,ZnO films can't be deposited on Si substrates. The AT PL spectrum of the sample deposited at 500℃ includes two emission peaks,their wavelength are 380nm and 520nm,respectively.After annealing,only one stronger 380nm peak is observed.But the appearance of ZnO 2 in the samples grown at 650℃ changes the photoluminescence spectra.For the as prepared films,the PL spectrum has one peak,the wavelength is 374nm,and a new emission peak with 575nm appears after annealing. Using Zn(C 2H 5) 2 and H\-2O,the deposited ZnO films are composed by high pressure phase of ZnO.The PL spectrum of the sample grown at 550℃ exhibits green emission whose wavelength is 520nm.The emission peak of the sample grown at 450℃ shifts to 345nm.Its energy,about 3 6eV,is larger than the band gap of ZnO.The forming and effects of high pressure phase of ZnO needs to be researched in detail.
【Fund】: 国家自然科学基金资助项目 ( 5 9872 0 3 7) ;; 安徽省科委自然科学基金资助项目 ( 9864 15 5 0 ) ;; 国家科委专项资金资助项目 (国科
【CateGory Index】: O484.4
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