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《Chinese Journal of Luminescence》 2004-03
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Green Photoluminescence Emitted from ZnO Films Deposited by r. f. Magnetron Sputtering

WANG Qing pu, ZHANG De heng, MA Hong lei, ZHANG Xing hua, ZHANG Xi jian (School of Physics and Microelectronics, Shandong University, Jinan*"250100, China)  
Highly orientated(002) polycrystalline ZnO films with hexagonal structure have been deposited by using r. f. magnetron sputtering. Strong monochromatic green photoluminescence (located at 514 nm) has been observed in these non intensively doped ZnO films when exited with 320 nm light.For the vacuum annealed samples at 830 ℃, the intensity of the green PL increases markedly. On the contrary, for the samples annealed in oxygen, the intensity of the green PL decreases rapidly. The green emission may correspond to the electron transition from deep oxygen vacancy level to the valance band.
【Fund】: 国家自然科学基金 ( 60 0 760 0 6) ;; 教育部博士项目基金 ( 2 0 0 0 0 42 2 0 4)资助项目
【CateGory Index】: O484
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