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《Chinese Journal of Luminescence》 2010-02
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Influence of Oxygen Flow Rate on the Morphology and the Optical Properties of Thin ZnO Films Grown by Pulsed Laser Deposition

CAO Pei-jiang,LIN Chuan-qiang,ZENG Yu-xiang,LIU Wen-jun,JIA Fang,ZHU De-liang,MA Xiao-cui,LU You-ming (School of Material Science,Shenzhen University;Shenzhen Key Laboratory of Special Functional Materials,Shenzhen 518060,China)  
ZnO is an interesting wide-band-gap semiconductor material with a direct band gap of 3.37 eV at room temperature and it makes more attention to the ultraviolet (UV) optoelectronic devices,such as UV laser,optical waveguide,and exciton-related devices.Usually,an insufficient supply of oxygen in ZnO during growth precludes various applications.In order to overcome these difficulties and obtain a strong ultraviolet near band edge emission and a much weaker emission band correlated with deep-level defects,it is necessary to prepare a high-quality thin ZnO film.In this paper,different oxygen flow rates (30,50 and 70 sccm) are introduced into the vacuum chamber and the influence of oxygen flow rate to the thin film quality is studied.It can be seen that thin ZnO films with strong c-axis preferred orientation are grown on single crystal silicon (111) and quartz (SiO2) substrates by pulsed laser deposition (PLD) method.In the range of 30~70 sccm for oxygen flow rate,thin ZnO film fabricated under the condition of O2 flow rate of 50 sccm has higher optical transmittance above 80%,higher O2 content ~ 40.71%,higher growth rate ~252 nm,stronger ultraviolet near band edge emission and a weaker emission band correlated with deep-level defects.
【Fund】: 国家自然科学基金(60976036 10604041);; 广东省自然科学基金(8151806001000009);; 深圳市产学研科技合作项目(Y2005002);; 深圳市科技计划(200604 200706 ZYC200903250140A);; 深圳市南山区科技研发资金(南科院2008012)资助项目
【CateGory Index】: O484.41
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