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《Chinese Journal of Luminescence》 2011-01
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Improvement of The Performances of Organic Light-emitting Devices Using Fe_3O_4 as p-dopant

ZHANG Dan-dan1,LIU Lei-shi2,CHEN Lu1,WANG Hai1,LIU Shi-yong1,FENG Jing1(1.State Key Laboratory on Integrated Optoelectronics,College of Electronic Science and Engineering,Jilin University,Changchun 130012,China;2.Jiangyin Xinshun Microelectronic Co.,Ltd,Jiangyin 214431,China)  
This paper reports a high performances Fe3O4 doped organic light emitting devices(OLEDs).The tris-(8-hydroxyquinoline) aluminum(Alq3)-based OLEDs with Fe3O4 doped N,N '-diphenyl-N,N'-bis(1,1'-biphenyl)-4,4'-diamine(NPB) exhibit a very low turn-on voltage of 2.5 V,and a high luminance of 30 590 cd/m2,while the turn-on voltage is 5 V and the luminance is 1 680 cd/m2 at 10 V for the undoped one.The power efficiency is increased from 1.2 lm/W to 2.0 lm/W at the current density of 20 mA/cm2 by inserting the Fe3O4-doped NPB layer.The Fe3O4 doping effects on the OLEDs are further clarified by analyzing the results of ultraviolet/visible/near-infrared absorption spectra and the characteristics on the hole-only devices.The improvements in device performances are attributed to the improved hole transport and conducti-vity through the formation of the charge transfer complex between Fe3O4 and NPB.Results on the UV photo-electron spectroscopy studies reveal that the hole-injection barrier from ITO to NPB is reduced by 0.37 eV by introducing the doped layer NPB∶Fe3O4.This enhances the hole injection and decreases the driving voltage,resulting a higher power efficiency.Therefore,the power consumption is lowered,and that good for prolonging the lifetime.
【Key Words】: organic light-emitting devices Fe3O4 p-dopant
【Fund】: 国家自然科学基金面上项目(60877019)资助
【CateGory Index】: TN383.1
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