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《Chinese Journal of Luminescence》 2018-06
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Effect of H Annealed BZO as Front Contact on Properties of Thin Films Amorphous Silicon Thin Film Solar Cells

TANG Lu;XUE Fei;GUO Peng;LUO Zhe;LI Wang;LI Xiao-min;LIU Shi-yong;The Center of Collaboration and Innovation,Jiangxi University of Technology;Institute of Photovoltaics,Nanchang University;Chint Solar (Zhejiang) Co.Ltd.;  
B doped Zn O( BZO) films were prepared on glass substrate by low pressure chemical vapor deposition( LPCVD) method. BZO films were annealed in hydrogen atmosphere and then were used as front contact structure for fabrication of amorphous silicon thin film solar cells. The results show that the carrier concentration of BZO films has no change after annealing in the hydrogen atmosphere,but the carrier mobility dramatically increases,which lead to great enhancement of electrical conductivity of BZO films. When a thinner BZO film with higher transmittance workes as the front contact structure,the light-generated current density increases by 0. 3-0. 4 m A/cm~2 and the conversion efficiency of amorphous silicon thin film solar cells is improved by 0. 2%. The results in this paper can provide a method for further improving the conversion efficiency of amorphous silicon thin film solar cells by optimizing optical and electrical properties of front contact of BZO thin films.
【Fund】: 江西科技学院科研启动费项目([2015]66号);; 江西科技学院自然科学基金(16ZRYB10);; 国家自然科学基金(21571095)资助项目~~
【CateGory Index】: TM914.42
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