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《ACTA MATERIAE COMPOSITAE SINICA》 1996-02
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RELATIONSHIP BETWEEN THE DEFECTS OF ALPHA-SILICON NITRIDE WHISKERS AND GROWTH ATMOSPHERE

Wu Huawu;Xu Gonghua; Wei Jingzhi;Lai Yueying;zhang Kehong(Dept.of Chemistry,Tsinghua University,Beijing 100084)  
Alpha-silicon nitride whiskers were prepared by the "in-situ" growth of ultrafine amorphous silicon nitride powders.The experiment was carried out at 1400~1450℃ for 1~4 hours.When the experiment was conducted in the atmosphere of nitrogen with high purity,the nitrogen content,oxygen content and chlorine content in alpha-silicon nitride whiskers obtained were 32%~34%,8%~6% and~0.1%,respectively.A lot of defects were detected in the whisker.However,when the experiment was completed in an atmosphere of ammonia,the content of nitrogen,oxygen and chlorine in the whiskers changed to 39%,1% and 0.01%,respectively,where nearly" defect-free "in the whisker was detected.
【Fund】: 国家自然科学基金
【CateGory Index】: TN304.054
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