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《Journal of Engineering Thermophysics》 2011-09
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Simulation on Phonon Heat Transport of Silicon Dioxide Nanomaterial by Lattice Boltzmann Method

HAN Ya-Fen XIA Xin-Lin DAI Gui-Long (School of Energy Science and Engineering,Harbin Institute of Technology,Harbin 150001,China)  
Based on the Debye model,the Phonon heat transport in nanofilm of silicon dioxide was simulated by Lattice Boltzmann method(LBM).The temperature distribution in silicon dioxide film was predicted by simulation to analyze the effective thermal conductivity.The calculated results show that the temperature slip phenomenon appears at the boundary when the Knudsen number Kn is larger than 0.01,which indicates the obvious microscale effect of heat conduction in the film. When the film thickness is less than 20 nm,its effective thermal conductivity descends sharply with the decrease of thickness.As the thickness is larger than 20 nm,however,the effective thermal conductivity tends to be constant.
【Fund】: 国家自然科学基金项目(No.50776026;No.90816022)
【CateGory Index】: TB383.1
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