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《Optoelecfronic Technology》 2001-01
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Transparent Conductive Oxide Doped Thin Films with High Valence Difference between Dopant and Ion Substituted

Meng Yang Yang Xiliang Chen Huaxian Shen Jie Jiang Yiming Zhang Zhuangjian (Department of Materials Science, Fudan University, Shanghai, 200433)  
The carrier mobility of practical transparent conductive oxide (TCO) thin film is mainly dominated by ionized impurity scattering. If the valence of the dopant is much more than that of the substituted ion, i.e. one atom of dopant contributes more electrons to the electrical conductivity, thus the film may have enough free carriers, a higher carrier mobility and a lower optical absorptance with a lower impurity. It is a convenient method to improve the properties of TCO films. In In 2O 3:Mo(IMO) thin film prepared by conventional thermal reactive evaporation, the valence difference of 3 between Mo 6+ and In 3+ was much bigger than those in other TCO films such as In 2O 3:Sn, SnO 2:F and ZnO:Al. The electrical resistivity as low as 1.7×10 -4 Ω cm was obtained, while the infrared reflectance above 4 μm and the average total visible light transmittance of the IMO film plus the glass substrate both were over 80%. The carrier mobility of IMO was in the range of 80 cm2V -1s -1 to 130 cm2V -1s -1, which was much higher than that of other TCO.The carrier concentration was in the range of 2.5×10 20 cm -3 to 3.5×10 20 cm -3, it might be developed further more to improve the conductivity of IMO.
【CateGory Index】: TN304
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