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《Optoelecfronic Technology》 2003-02
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Effects of Sputtering Argon Partial Pressure on Photoelectric Properties of Transparent Conducting ITO Films Deposited on Flexible Substrate

YANG Tian lin 1, HAN Sheng hao 2, GAO Xu tuan 1 (1.Department of Physics, Shandong University of Technology, Zibo, 255049, China; 2.School of Physics and Microelectronics, Shandong University, Jinan, 250100, China)  
High quality ITO (10% SnO 2 impurity w.t.) films were deposited on water cooled PPA (Polypropylene adipate) substrate by r.f.magnetron sputtering. This paper has discussed the structure and photoelectric properites of films dependence of sputtering argon partial pressure. Appropriate argon partial pressure is 0.5 Pa in this condition, the resistivity of the films is as low as 4.6×10 -4 Ω·cm and Hall mobility is 75 cm 2/(V·s). In visible range, the transmittance of the films is about 80% , in infrared range plasma resonance absorption wavelength is shorter with argon partial pressure decreased. XRD patterns indicate the X ray diffraction peaks of increase and peaks of decrease with argon partial pressure decreasing, which means the amount of crystal grain growing along increases. XPS spectra indicate that the density of the oxygen vacancies increases with the argon partial pressure decreased.
【Fund】: 国家自然科学基金资助项目 ( No.60 1 760 2 1 )
【CateGory Index】: TN304.055
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