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《Optoelectronic Technology》 2010-02
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Investigation on Transmission Mode GaAs Photocathode

Ma Jianyi,Sun Jian(The No.55 Research Institute of China Electronics Technology Group Corporation,Nanjing 210016,CHN)  
The transmission GaAs photocathode fabrication technique and the mechanism of the Cs-O activation for the GaAs are introduced.The experimental results of the GaAs photocathode with Cs-O activation has been analyzed,some existing problems and the reasons are pointed out after the analysis.The important way of how to increase the GaAs photocathode photo-electric sensitivity is discussed.The technique methods of increasing the GaAs photocathode sensitivity is concluded in detail and also the further research direction is put forward.
【CateGory Index】: O462.3
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【References】
Chinese Journal Full-text Database 1 Hits
1 CHEN Liang1,2,QIAN Yun-sheng1,CHANG Ben-kang1(1 Institute of Electronic Engineering & Optoelectronics Technology,Nanjing University of Science and Technology,Nanjing 210094,China)(2 Institute of Optoelectronics Technology,China Jiliang University,Hangzhou 310018,China);Reflection on Surface Photovoltage Spectroscopy for Transmission-mode GaAs Photocathodes of Different Active Layer Thickness[J];Acta Photonica Sinica;2011-07
【Citations】
Chinese Journal Full-text Database 2 Hits
1 Wang Guihua,Yang Weiyi,Zong Zhiyuan (School of Electron Engineering and Photoelectron Technology,Nanjing University of Science and Technology,Nangjing,210094,China);Quantitative Angle Dependent XPS Studies of Activation of GaAs Photocathode[J];Vacuum Science and Technology;2002-06
2 Wang Guihua and Fang Hongbing (Nanjing University of Science and Technology, Nanjing, 210094, China);XPS Studies of Thermally Cleaned Surfaces of GaAs and (Cs,O)/GaAs[J];Vacuum Science and Technology;2003-05
【Co-citations】
Chinese Journal Full-text Database 1 Hits
1 Chen Gaoshan,Cheng Hongchang,Shi Feng,Liu Hui,Feng Liu,Ren Bing,Cheng Wei(1.Xi′an Institute of Applied Optics,Xi′an 710065,China;2.COSTIND Key Laboratory for Low-Light-Level Technology,Xi′an 710065,China);Analysis and Elimination of Micro-particle Contaminants Source on NEA GaAs Photocathode Surface and Inside of the UHV System[J];Chinese Journal of Vacuum Science and Technology;2010-02
【Co-references】
Chinese Journal Full-text Database 5 Hits
1 YANG Zhi,ZOU Ji-jun,NIU Jun,ZHANG Yi-jun,CHANG Ben-kang Institute of Electronic Engineering and Optoelectronic Technology,Nanjing University of Science and Technology,Nanjing 210094,China;Research on High Temperature Cs Activated GaAs Photocathode[J];Spectroscopy and Spectral Analysis;2010-08
2 Du Xiaoqing,Zong Zhiyuan,Chang Benkang Institute of Electronic Engineering and Optoelectronics Technology,Nanjing University of Science and Technology,Nanjing 210094;Spectral Response Measurement and Analysis of Stability for GaAs Photocathode[J];Acta Photonica Sinica;2004-08
3 Du Yujie 1,2, Du Xiaoqing 1,3,Chang Benkang1,Qian Yunsheng1 1 Institute of Electronic Engineering and Opto-electric Technology, NJUST, Nanjing 210094 2 Physics and Electronic Science Department,Institute of Bingzhou,Shandong Bingzhou 256603 3 Institute of Opto-electron Engineering,Chongqing University,Chongqing 400044;Spectral Response Performance of Transmission-mode GaAs Photocathode in Activation[J];Acta Photonica Sinica;2005-12
4 Zou Jijun1,2,Chang Benkang1,Du Xiaoqing1,Chen Huailin1,Wang Hui1,Gao Pin1 1 Institute of Electronic Engineering & Opto-electronic Technology,Nanjing University of Science & Technology,Nanjing 210094 2 Department of Electronic Engineering,East China Institute of Technology,Jiangxi Fuzhou 344000;The Effect of Cs/O Activation Current Ratio on GaAs Photocathode[J];Acta Photonica Sinica;2006-10
5 ZOU Ji-jun1,2,GAO Pin2,YANG Zhi2,CHANG Ben-kang2(1 Department of Electronic Engineering,East China Institute of Technology,Fuzhou,Jiangxi 344000,China)(2 Institute of Electronic Engineering & Opto-electronic Technology,Nanjing University of Science & Technology,Nanjing 210094,China);Influence of Active-Layer Thickness on Reflection-mode GaAs Photocathode[J];Acta Photonica Sinica;2008-06
【Secondary Citations】
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1 Wang Guihua,Yang Weiyi,Chang Benkang(School of Electron Engineer and Photoelectron Technology,Nanjing)(University of Science and Technology,Nanjing 210094);STUDY OF COMPOSITION/DEPTH ANALYSIS TECHNIQUE BY ANGULAR DEPENDENT XPS[J];VACUUM AND CRYOGENICS;1999-04
2 WANG Gui-hua,FU Rong-guo,YANG Wei-yi (Institute of Electron Engineering and Photoelectric Technology,Nanjing University of Science and Technology,Nanjing 210094,China);QUANTITATIVE STUDY ON(Cs,O)/GaAs UNDER ANNEALING BY ANGULAR DEPENDENT XPS[J];Vacuum and Cryogenics;2001-01
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