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《Journal of Atmospheric and Environmental Optics》 2006-06
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Dark Resistivity of GaAs Photoconductive-switch Before and After Break Down

LI Xi-yang DAI Hui-ying SHI Wei HOU Jun-yan YANG Li-na (Project University of Airforce,Xi'an University of Technology,Xi'an 710073,China)  
The dark resistivity of semi-insulating GaAs photoconductive-switch which work in non-linear mode before and after break down is studied.We consider that the stages of broke down and lock-on change electronics trap density(especial EL2) and the form of As atom partially,which cause the reduce of dark resistivity after break down.
【CateGory Index】: TN252
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