Full-Text Search:
Home|Journal Papers|About CNKI|User Service|FAQ|Contact Us|中文
《Journal of Atmospheric and Environmental Optics》 2006-06
Add to Favorite Get Latest Update

Dark Resistivity of GaAs Photoconductive-switch Before and After Break Down

LI Xi-yang DAI Hui-ying SHI Wei HOU Jun-yan YANG Li-na (Project University of Airforce,Xi'an University of Technology,Xi'an 710073,China)  
The dark resistivity of semi-insulating GaAs photoconductive-switch which work in non-linear mode before and after break down is studied.We consider that the stages of broke down and lock-on change electronics trap density(especial EL2) and the form of As atom partially,which cause the reduce of dark resistivity after break down.
【CateGory Index】: TN252
Download(CAJ format) Download(PDF format)
CAJViewer7.0 supports all the CNKI file formats; AdobeReader only supports the PDF format.
【References】
Chinese Journal Full-text Database 1 Hits
1 LIU Juan,LI Yin-xin,SU Wei,SHI Shi-tai(Institute of Electronic Engineering,China Academy of Engineering Physics,Mianyang 621900,China);Research on breakdown character of coplanar GaAs photoconductive switch[J];Transducer and Microsystem Technologies;2009-02
【Citations】
Chinese Journal Full-text Database 6 Hits
1 Shi Wei and Tian Liqiang(Department of Applied Physics,Xi'an University of Technology,Xi'an 710048,China);Breakdown Characteristics of Semi-Insulating GaAs Photoconductive Switch[J];Chinese Journal of Semiconductors;2004-06
2 Yang Ruixia Fu Jun (Hebei Institute of Technology, Tianjin 300130) Li Guangping (Tianjin Electronic Materials Research Institute, Tianjin 300192);STUDY ON DISTRIBUTION CHARACTERISTICS OF EL2 IN UNDOPED LEC SI GaAs[J];;1995-01
3 ZHAO Zhouying(Nanjing Electronic Devices Institute, Nanjing 210016)WU Fengmei(Department of Physics,Nanjing University, Nanjing 210093);INVESTIGATION ON A RELATION BETWEEN EL2 GROUP AND EL6 GROUP IN SI-GaAs[J];JOURNAL OF FUNCTIONAL MATERIALS AND DEVICES;1996-01
4 Yang Ruixia(Hebei Institute of Technology,Tianjin,300130)Li Guangping, Ru Qiongna,Li jing(Tianjin ELectronic Materials Research Institute,300192)Luo Jinsheng(Xi'an Jiaotong University,710049);Homogeneity of Annealed and Quenched LEC SI GaAs[J];Research & Progress of Solia State Electronics;1996-01
5 YANG Ruixia (Hebei University of Technology, Tianjin, 300130, CHN) LAI Zhanping (Tianjin Electronic Materials Reserach Institute, 300192, CHN);Effects of As Pressure Duing Annealing on Defects for Semi-insulating GaAs[J];Research & Progress of Solia State Electronics;2002-03
6 LIU Li feng, YANG Rui xia, GUO Hui (School of Electrical Engineering and Information Technology,Hebei University of Technology,Tianjin 300130,China);Study on Mechanism of Efects on El2 in GaAs by Annealing and Quenching[J];Infrared Technology;2002-01
【Co-citations】
Chinese Journal Full-text Database 10 Hits
1 Shi Wei1,Zhang Xianbin1,Jia Wanli1,Li Mengxia1,Xu Jingzhou2 and Zhang Xicheng2(1 Department of Applied Physics,Xi'an University of Technology,Xi'an 710048,China) (2 Rensselaer Polytechnic Institute,Troy,NY 1218023590,USA);Investigation on Terahertz Generation with GaAs Photoconductor Triggered by Femo-Second Laser Pulse[J];Chinese Journal of Semiconductors;2004-12
2 Shi Wei,Jia Wanli,and Ji Weili(Department of Applied Physics,Xi’an University of Technology,Xi’an 710048,China);Ultra-Wideband Electromagnetic Radiation from GaAs Photoconductive Switches[J];Chinese Journal of Semiconductors;2005-01
3 Xu Yuesheng 1,Fu Shenghui 1,Liu Caichi 1,Wang Haiyun 1,Wei Xin 1,and Hao Jingchen 2(1 Heibei University of Techonology,Tianjin 300130,China)(2 No.13th Research Institute,China Electronics Technology Group Corporation,Shijiazhuang 050051,China);Influence of AB Microdefects in LEC Semi-Insulating GaAs Substrate on Property of MESFET[J];Chinese Journal of Semiconductors;2005-01
4 Tian Liqiang and Shi Wei(Department of Applied Physics,Xi'an University of Technology,Xi'an 710048,China);Delayed-Dipole Domain Mode of Semi-Insulating GaAs Photoconductive Semiconductor Switches[J];Chinese Journal of Semiconductors;2007-06
5 DAI Hui-ying1,2, SHI Wei1(1. Department of Applied Physics, Xi'an University of Technology, Xi'an 710084, CHN; 2. Department of Applied Mathematics and Physics, Air Force Engineering University, Xian 710038, CHN);Photovoltaic Response Characteristics of GaAs Photoconductive Switches Under High Gain Mode[J];半导体光子学与技术(英文版);2007-04
6 LI Yin-xin,SU Wei,LIU Juan(Institute of Electronic Engineering,China Academy of Engineering Physics,Mianyang 621900,China);Research on withstand voltage characteristics of opposed contacts GaAs PCSS[J];Transducer and Microsystem Technologies;2009-06
7 Li Yinxin Su Wei Liu Juan (Institute of Electronic Engineering ,Chinese Academy of Engineering Physics,Mianyang,Sichuan 621900,China);Analysis of Breakdown in GaAs Photoconductive Switch[J];Laser & Optoelectronics Progress;2008-12
8 ZHAO Wen-bin,ZHANG Guan-jun,YAN Zhang (State Key Laboratory of Electrical Insulation and Power Equipment,School of Electrical Engineering,Xi'an Jiaotong University,X'an 710049 China);Research progress on flashover phenomena across semiconducting materials under high electric field[J];High Power Laser and Particle Beams;2007-03
9 Zhang Xian-Bin~ Shi Wei(Department of Applied Physics, Xi'an University of Technology, Xi'an 710048, China);Optimize the output performance by shortening the cavity length of the THz electromagnetic wave parametric oscillator[J];Acta Physica Sinica;2006-10
10 Jia Wan-Li 1)Ji Wei-Li 1)Shi Wei 1)2)1)(College of Science,Xi'an University of Technology,Xi'an 710048,China)2)(State Key Laboratory of Functional Materials,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China);Two-dimensional Monte Carlo simulation of screening of the bias field in terahertz generation from semi-insulated GaAs photoconductors[J];Acta Physica Sinica;2007-04
【Co-references】
Chinese Journal Full-text Database 2 Hits
1 LI Qi, SHI Wei (Xi'an University of Technology, Xi'an 710048, China);Experiment Study of High Voltage Sub-nanosecond Photoconductive Switch[J];Power Electronics;2002-04
2 ;Insulation Protection of High voltage Ultra fast GaAs Photoconductive Switch[J];HIGH VOLTAGE ENGINEERING;1998-01
【Secondary Citations】
Chinese Journal Full-text Database 10 Hits
1 HUANG Yunian(Beijing Institute of Applied Physics and Computational Mathematics, Beijin 100088, CHN);High power microwave generation using photoconductive semiconductor switches[J];SEMICONDUCTOR OPTOELECTRONICS;1998-02
2 Xu Bo; Wang Zhanguo; Wan Shouke; Sun Hong; Zhang Hui;Yang Xiquan and Lin Lanying(Institute of Semiconductors, The Chinese Academy of Sciences. Semiconductor Materials Science Laboratory, The Chinese Academy of Sciences Beijing 100083)I. P. Koutzarov(Semic;New Explanation to EPC Phenomenon in EL2 Photoquenching[J];CHINESE JOURNAL OF SEMICONDUCTORS;1994-05
3 Shi Wei(Xi′an University of Technology, Xi′an 710048)Liang Zhenxian(Xi′an Jiaotong University, Xi′an 710049);Optically Activated Charge Domain Phenomena in High Gain Ultra Fast High Voltage GaAs Photoconductive Switches[J];CHINESE JOURNAL OF SEMICONDUCTORS;1999-01
4 Liang Zhenxian(Institute of Electrical Insulation,Xi'an Jiaotong University.Xi'an 710049)Shi Wei(Dept、of Applied Physic ,Xi’an University of Technology,Xi'an 710048);Fabrication of High-Voltage Ultra-Fast Photoconductive Switches[J];ACTA ELECTRONICA SINICA;1998-11
5 Niu Yan-xiong (College of Ordnance Engineering, Sijfiazhang, China, 050003)Tan Jichun(National university of Defense Technology, Changsha 410073);Thermal runaway of the GaAs photoconductive switch[J];Journal of Optoelectronics.laser;1994-05
6 Yang Ruixia(Hehei Institute of Technology, Tianjin, 300130);Study on Improving Mechanism of Uniformity of EL2Distribution in Undoped LEC SI GaAs by Heat Treatment[J];RESEARCH & PROGRESS OF SOLIA STATE ELECTRONICS;1994-01
7 Gong Renxi 1),2) Zhang Yimen 1) Shi Shunxiang 1) Zhang Tongyi 1) 1) Microelectronic Institute, Xidian University, Xi′an 710071 2), Electrical Engineering School, Guangxi University, Nanning 530004;Analysis of Lock-On and Time Delay in High-Voltage GaAs PCSS′s[J];Acta Optica Sinica;2001-11
8 Weng Yumin, Liu Song, Zong Xiangfu(Institute of Materials Science, Fudan University, Shanghai 200433, China);PHOTOLUMINESCENCE STUDIES OF DEFECTS IN GaAa[J];Journal Infrared Millimeter and Waves;1992-01
9 Shi Wei 1) Zhao Wei 2) Zhang Xian Bin 1) Li En Ling 1) 1) (Department of Applied Physics, Xi'an University of Technology, Xi'an\ 710048, China) 2) (State Key Laboratory of Transient Optics and Technology, Xi'an;Investigation of high-power sub -nanosecond GaAs photoconductive switches[J];Acta Physica Sinica;2002-04
10 Liu Hongxia Hao Yue (Research Inst. of Microelectronics, Xidian Univ., Xian, 710071);Hole breakdown theories of thermal grown super thin gate oxides and the impact ionization model[J];JOUNAL OF XIDIAN UNIVERSITY;1998-02
©2006 Tsinghua Tongfang Knowledge Network Technology Co., Ltd.(Beijing)(TTKN) All rights reserved