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《High Voltage Engineering》 2008-01
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Principle-electrics Model of IGCT and Dynamic Characteristic Simulation

DUAN Da-peng1, JIANG Xiu-chen1, SUN Cai-xin2(l. Department of Electrical Engineering, Shanghai Jiaotong University, Shanghai 200030, China;2. The Key Laboratory of High Voltage Engineering and Electrical New Technology, Ministry of Education, Chongqing University, Chongqing 400044, China)  
As one kind of power electronics elements with four-layer semiconductor and three PN junctions, the Integrated gate commutated thyristor(IGCT) can be simplified to double-transistor equivalent circuit. The turn-on process of IGCT is similar to GTO, but its turn-off process is different from GTO because of the reverse drawing out action of gate pole during turning-off. In this paper, according to the conformation and principle stated above and extra electric characteristic of IGCT, the principle-electrics model of IGCT was investigated using ORCAD based on the two parallel Hu-Ki models. The schematics of the model and the parameters were presented in detail. Subsequently, the dynamic characteristics of IGCT was simulated using the principle-electrics model of IGCT, and the simulation results, including turn-on voltage, turn-on current, turn-off voltage, turn-off current, turn-off energy pulse, turn-off gate pole voltage and turn-off gate pole current, were presented respectively. The turn-off time of the IGCT simulated in this paper is 2 μs, the turn-off energy is 0.1 J, and the peak value of turn-off gate pole current is 25 A which represents markedly the reverse drawing out action. Additionally, the simulation results are consistent with the test waveforms provided by the ABB company. In conclusion, the principle-electrics model established in this paper has clear physical meaning, simple structure and wide universality, it can be used not only for simulation study of IGCT, but also for choice and application of IGCT, design for auxiliary or protect circuit. However, compared with physical model, the model proposed in this paper can not describe the physical process inside but merely depicts the extra electric characteristic of IGCT.
【CateGory Index】: TP391.9
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