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《High Voltage Engineering》 2012-07
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Research on Atomic Layer Deposition of Alumina Thin Film with Plasma Assisted

SANG Lijun1,ZHAO Qiaoqiao1,HU Zhaoli2,LI Xingcun1,LEI Wenwen1,CHEN Qiang1(1.Laboratory of Plasma Physics and Materials,Beijing Institute of Graphic Communication, Beijing 102600,China;2.Patent Examination Cooperation Center of the Patent Office, State Intellectual Property Office,Beijing 100190,China)  
In order to achieve atomic layer deposition of alumina thin films at room temperature,taking trimethylaluminum(TMA) as the precursor and oxygen as the oxidant,respectively,we used an atomic layer deposition(PA-ALD) setup of homemade electron cyclotron resonance(ECR) assisted with plasma to deposit Al2O3 thin film on the single crystal silicon surface at room temperature.Through scanning electron microscope(SEM),atomic force microscope,high resolution transmission electron microscope,X-ray diffraction and X-ray photoelectric spectroscopy,the surface topography and composition of the as-deposited films were tested.It is found that the Al2O3 films are amorphous,and the atomic ratio of aluminum to oxygen is close to 2/3.The film surface is very smooth and the roughness is smaller than 0.4 nm.The cross-sectional images show that the film thickness is 80 nm with specially clear and smooth interface,better film quality,and the deposition rate is 0.27 nm in one cycle,which is much larger than the thermal ALD.
【Fund】: 国家自然科学基金(11175024);; 北京市自然科学基金(1112012);; 北京印刷学院校级资助项目(E-b-2012-35)~~
【CateGory Index】: O484.1
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