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《Acta Polymerica Sinica》 2019-09
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Recent Progress of Imide-functionalized N-type Polymer Semiconductors

Yong-qiang Shi;Ying-feng Wang;Xu-gang Guo;Department of Materials Science and Engineering, Southern University of Science and Technology;  
Polymer semiconductors have attracted substantial interests in both academia and industry, recently,attributed to their distinctive advantages, including widely-tunable chemical structure and optoelectronic property,solution processability, and mechanical flexibility. In the last decade, a great deal of efforts have been dedicated to developing P-type(hole transporting) polymer semiconductors, however the development of N-type(electron transporting) polymer analogues lags far behind compared to their P-type counterparts due to the scarcity of highly electron-deficient building blocks, accompanied steric hindrance, and synthetic barriers. In fact, high-performance N-type polymer semiconductors are essential for organic complementary logic circuits and p-n junctions, hence it is imperative to develop high-performance N-type polymer semiconductors, which hinge on the design and synthesis of new electron deficient building blocks with compact geometry and good solubilizing capability.Among various electron deficient building blocks, imide-functionalized(hetero)arenes hold the most promising structural and electronic features for enabling N-type polymer semiconductors. This account summarizes the latest progress of N-type polymers, particularly the polymers based on imide-functionalized(hetero)arenes developed by our group. These new imide-functionalized(hetero)arenes include a series of ring-fused ladder-type heteroarenes up to 5 imide groups and 15 rings in a row, which offer a remarkable platform for developing N-type polymer semiconductors with widely tunable optoelectronic property and film morphology. In addition, a series of β-position functionalized or modified bithiophene imide derivatives are also devised and synthesized. The introduction of the most electronegative fluorine atom and the substitution of thiophene with more electron deficient thiazole yield further lower-lying LUMO energy levels, which promote N-type characteristics for the polymer semiconductors in devices. This account introduces the materials design principles for N-type polymer semiconductors and elaborate the synthetic routes to the new imides and the corresponding polymer semiconductors. In addition, the N-type device performance of the polymer semiconductors based on these imidefunctionalized building blocks in organic field-effect transistors(OFETs) and polymer solar cells(PSCs) are commented, and the materials structure-property correlations are elaborated. Finally, our insights into future materials innovation of N-type polymer semiconductors by inventing new imide-functionalized building blocks are provided.
【Fund】: 国家自然科学基金(基金号51573076)项目资助
【CateGory Index】: TQ317;TN304
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