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The Studies of Synthesizing SiC Nanometer Powders by Chemical Vapour Reaction

Yang Xiuchun; Han Gaorong; Du Piyi; Zhou Guozhi (Department of Physical Chemistry, University of Science and Technology, Beijing, 100083, China)( Department of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China)  
SiC ultra fine powders have been synthesized by chemical vapor reaction of SiH4-C2H4-H2 system during 1423K-1673K. The powders were analyzed by transmission electron microscope(TEM), selected-area electron diffraction(SEAD), Fourier transform infrared spectroscope (FTIS), BET, X-ray diffraction(XRD),high resolu microscope(HRFM) and chemical analyses. The results show that the highly pure and ultrafine powder can be obtameo by changmg reactive temperature and C2H4/SiH4 mole ratio. Excess silicon exists in the powder synthesised below 1623K, excess carbon exists in the powder synthesized over 1623K,single-phase β-SiC exists in the powder synthesized at 1623k. The average particle size of the powder synthesized at 1623K is about 11nm , and the powder contains 97. 8wt%SiC, 1. 3wt%O, 0. 9wt %C. Free Si has important effect on particle size of powders.
【Fund】: 国家自然科学基金
【CateGory Index】: TF123.31
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