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《Journal of Functional Materials》 2005-12
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Research on ZnO/Si heteroepitaxy using pulsed laser deposition

ZHAO Jie,HU Li-zhong,WANG Zhao-yang,LI Yin-li,WANG Zhi-jun,ZHANG He-qiu,ZHAO Yu(State Key Laboratory of Materials Modification by Laser,Ion and Electron Beams & Department of Physics,Dalian University of Technology,Dalian 116024,China)  
ZnO thin films were prepared on Si(111) substrates by PLD technique.RHEED and XRD results indicate that the ZnO thin film directly deposited on Si is polycrystalline and its crystallinity is deteriorated as the substrate temperature increases.When employing a low-temperature ZnO homo-buffer layer,high-quality epitaxial ZnO thin films are obtained as reflected by the aligned spotty RHEED images.XRD and PL spectra at room temperature suggest that the crystal quality of epitaxial ZnO thin films grown on a homo-buffer layer is enhanced markedly by increasing the substrate temperature.And the film prepared at 650℃ exhibits the smallest(002) peak full width at half maximum(FWHM) of 0.185° and the most intense UV emission with a FWHM of 86meV.
【Fund】: 国家自然科学基金资助项目(60377005);; 辽宁省科学技术基金资助项目(20022133)
【CateGory Index】: TN304
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