Full-Text Search:
Home|Journal Papers|About CNKI|User Service|FAQ|Contact Us|中文
《Journal of Functional Materials》 2008-07
Add to Favorite Get Latest Update

The fabrication of thin film transistors with ZnO as active channel layer

ZHANG Xin-an1,2,ZHANG Jing-wen1,ZHANG Wei-feng2,WANG Dong1,BI Zhen1,ZHANG Jie1,HOU Xun1,2 (1.Key Laboratory of Photonics Technology for Information,Xi'an Jiaotong University,Xi'an 710049,China;2.School of Physics and Electronics,Henan University,Kaifeng 475001,China)  
Bottom-gate thin film transistors with ZnO as the active channel layer were fabricated on(100) silicon wafer or ITO glass by lift-off and rf sputtering method.The ZnO films deposited on insulator layer were characterized by X-ray diffractometry and atomic force microscopy.Thermally oxidized SiO2 film was served as insulator in ZnO-TFT fabricated on silicon wafer,and aluminum metal was used for source and drain contacts.The device operated in n channel enhancement mode with the threshold voltage,current on/off ratio,channel mobility of 8V,5×103 and 0.61cm2/(V·s),respectively.The SiO2,Al2O3,SiNx,PbTiO3 films were used as gate insulators in transparent ZnO-TFTs fabricated on ITO glass.It was found that the ZnO films all have high c-axis preferential orientation on different insulators and the average optical transmittance of transparent ZnO-TFTs was 85% approximately.
【Fund】: 陕西省科技攻关资助项目(2005K04-G6)
【CateGory Index】: O484
Download(CAJ format) Download(PDF format)
CAJViewer7.0 supports all the CNKI file formats; AdobeReader only supports the PDF format.
【Co-references】
Chinese Journal Full-text Database 10 Hits
1 Zhang Xin’an 1,2,,Zhang Jingwen2,Yang Xiaodong2,Lou Hui1, Liu Zhenling2,Zhang Weifeng1,and Hou Xun 1,2(1 School of Physics and Photoelectronics,Henan University,Kaifeng 475001,China) (2 Key Laboratory of Photonics Technology for Information of Shanxi Province,Xi’an Jiaotong University,Xi’an 710049,China);Fabrication of ZnO Thin-Film Transistors by L-MBE*[J];Chinese Journal of Semiconductors;2006-06
2 LIN Ming-tong1,YU Feng1,ZHANG Zhi-lin1,2(1.The Joint Laboratory for Flat Panel Display Engineering for Shanghai University and SVA Electron Co.Ltd.,Shanghai 200072,CHN;2.Key Laboratory for Advanced Displays and System Applications of Ministry of Education,Shanghai University,Shanghai 200072,CHN);The Latest Research Progress on Zinc Oxide Based Thin Film Transistors[J];Optoelectronic Technology;2008-04
3 YUAN Guang-cai,XU Zheng,ZHANG Fu-jun,WANG Yong,XU Hong-hua,SUN Xiao-bin(Institute of Optoelectronics Technology,Beijing Jiaotong University,Key Laboratory of Luminescence and Optical Information,Ministry of Education,Beijing 100044,China);Study on transmittance of ZnO based on transparent thin-film transistor with complex insulative buffer layer of Al2O3/AlN[J];Journal of Functional Materials;2007-02
4 XU Hong-hua1, XU Zheng2, HUANG Jin-zhao2, YUAN Guang-cai2, SUN Xiao-bin2, CHEN Yue-ning1 (1. Department of Physics, Liao-ninUniversity, Shenyang 110036 ; 2. Key Laboratory of Luminescence and Optical Information , Ministry of Education Institute of Optoelectronics Technology, Beijing Jiaotong University , Beijing 100044 );Research Progress on Thin Film Transistor[J];Photon Technology;2006-03
5 LIU De-wu,ZHU Wen-qing,WU You-zhi, JIANG Xue-yin,ZHANG Zhi-lin,XU Shao-hong (School of Material Science and Engineering, Shanghai University, Shanghai 201800, China);Effect of High Frequency Discharge Treatment on Performances of Organic Thin Film Electroluminescent Device[J];Journal of Shanghai University(Natural Science Edition);2004-06
6 XU Hong-hua~1,CHEN Yue-ning~1,YUAN Guang-cai~2(1.Department of Physics,Liaoning University,Shenyang 110036,China;2.Institute of Photoelectron Research,Beijing Jiaotong University,Beijing 100044,CHina);Advances in Research on Thin Film Transistor Using ZnO as the Active Channel Layer[J];Journal of Shenyang Normal University(Natural Science Edition);2007-01
7 Wang Xiong Cai Xi-Kun Yuan Zi-Jian Zhu Xia-Ming Qiu Dong-Jiang Wu Hui-Zhen (Department of Physics,State Key Laboratory of Silicon Materials,Zhejiang University,Hangzhou,Zhejiang 310027,China);Study of zinc tin oxide thin-film transistor[J];Acta Physica Sinica;2011-03
8 ZHANG Zhi-wei~1, JING Hai~1,Kuang Jun-feng~1, CAI Ke-xuan~1,GAO Feng-li~2,ZHU Chang-chun~1 (1. North Liquid Crystal Engineering Research and Development Center, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130031,China, 2. College of Electronics and Engineering, Jilin University,Changchun 130023,China);Research on TFT-OLED Driver Circuit[J];Chinese Journal of Liquid Crystals and Displays;2004-06
9 CHENG Song-hua, ZENG Xiang-bin (Department of Electronic Science and Technology, Huazhong University of Science and Technology, Wuhan 430074, China);Study on ZnO-based Thin Film Transistors[J];Chinese Journal of Liquid Crystals and Displays;2006-05
10 MA Xian-mei1,2,3,JING Hai1,3,MA Kai1,WANG Long-yan1,2,3,WANG Zhong-jian1,2,3(1.Changchun Institute of Optics,Fine Mechanics and Physics,Changchun 130033,China,2.Graduate School of Chinese Academy of Sciences,Beijing 100049,China;3.North Liquid Crystal Engineering Research and Development Center,Changchun 130033,China);ZnO Films and Properties of ZnO-TFT[J];Chinese Journal of Liquid Crystals and Displays;2009-03
©2006 Tsinghua Tongfang Knowledge Network Technology Co., Ltd.(Beijing)(TTKN) All rights reserved