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《Journal of Functional Materials》 2015-18
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Kinematics analysis on the double-sided polishing without planet carrier of 3 inch SiC substrate

ZHANG Peng;FENG Xianying;YANG Jingfang;Key Laboratory of High Efficiency and Clean Mechanical Manufacture,Ministry of Education,Shandong University;  
Oriented to the precision polishing of the 3inch SiC substrate,the geometric model of the double-sided polishing mechanism without planet carrier was designed. The trajectory equation about any abrasive A on polishing pad relative to SiC substrate was derived. The process parameters such as the speed of the sun gear,planet gear,ring gear and the polishing plate and the track curvature were analyzed by the co-simulation with C# and Matlab. Besides,based on the ADAMS,kinematics simulation of double-sided polishing was carried out. The curves of displacement,velocity and acceleration versus time of the 5 points on the surface of 3inch SiC substrate have been got. The simulation results show that the more uniform polishing track obtain when the abrasive distribution radius( RA) appropriately increase,the range of trajectory of abrasive on the wafer was increased,while the speed ratio m of the ring gear to the sun gear was- 1. 25 and the speed ratio n of the polishing plate to the sun gear was 1. The experiment was conducted according to the optimal parameters of the simulation. The silicon carbide SiC substrate comes out with a material removal rate( MRR) range of 1-2 μm / h,while the surface roughness( Ra) was less than 2 nm,and the total thickness variation( TTV),the bending of wafer( BOW) and the warpage( Warp) are both less than 15 μm after the mechanical polishing. It verifies the correctness of the theoretical model and the rationality of the virtual prototype.
【Fund】: 国家自然科学基金资助项目(51375266)
【CateGory Index】: TN305.2
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