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《Journal of Functional Materials and Devices》 2007-02
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Photoelectric performance of FeS_2/TiO_2 composite thin films

ZHANG Chen-ning1,HU Zhi-qiang1,LIU Li-hong1,YU Xian-xian1,GAO Yan1,Masayuki Okuya2,Shoji Kaneko2(1.Department of Materials Science and Engineering,Dalian Institute of Light Industry,Dalian 116034,China;2.Department of Materials Science Shizuoka University,3-5-1 Johoku,Hamamatsu-shi,Shizuoka 432-8561,Japan)  
FeS2 thin films were deposited on porous surface of TiO2 on ITO conducting glass by solution dipping method.FeS2/TiO2 composite thin films were obtained by annealing under sulfur atmosphere and by making use of Fe2O3 powder to protect uncovered ITO conducting film.Thickness of FeS2/TiO2 composite thin films,resistance of ITO conducting glass and photoelectric performance of FeS2/TiO2 composite thin films prepared with Different conditions were investigated by XRD,B531/H digital thickness mater,four point resistance probes and XJCM-8.The results indicate that FeS2/TiO2 composite thin films with excellent photoelectric performance can be obtained by this method;resistance of ITO conducting film changes little.Therefore,this kind of film is suitable for preparing dye-sensitized solar cells(DSSC)
【Fund】: 863项目(No.2006AA05Z417);; 国家自然科学基金资助项目(No.50376007);; 辽宁省教育厅科技基金资助项目(No.202073422).
【CateGory Index】: TB383.2
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