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《Journal of Functional Materials and Devices》 2011-06
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The design and simulation of four-junction solar cell InGaP/GaAs/GaInAsN/Ge

ZHANG Guo-fang,TANG Ji-yu,CHEN Jun-fang,ZHOU Fu-cheng,Lin Bang-xi,LIAO Jian-jun (College of Physics and Telecommunication,South China Normal University,Guangzhou 510006,China)  
With the development of the multi -junction solar cell technology,four -junction InGaP/GaAs (InGaAs)/(New material)/Ge solar cells are a widely - pursued route toward higher efficiencies.Quaternary compound material Ga_(1-x)In_x As_(1-y)N_y has the ability to achieve a bandgap of 0.95~1.05eV,furthermore, with an optical composition it is lattice - matched to GaAs and Ge,which is the most promising next - generation solar cells material.In the paper,We have designed and simulated the InGaP/GaAs/ GalnAsN/Ge solar cell structure with the software Apsys for the first time.Compared with the traditional structure InGaP/GaAs/Ge,InGaP/GaAs/GaInAsN/Ge achieve a higher conversion efficiency.
【Key Words】: GalnAsN solar cell conversion efficiency
【Fund】: 广东省自然科学基金(10151063101000048)
【CateGory Index】: TM914.4
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【Citations】
Chinese Journal Full-text Database 1 Hits
1 WANG Yi-zhe,MA Xiao-feng,CAO Meng,ZHOU Chen-yue(Shanghai Center for Photovotaic,Shanghai 201201,China);New progress on silicon-based nano-structured solar cells[J];Journal of Functional Materials and Devices;2010-05
【Secondary Citations】
Chinese Journal Full-text Database 2 Hits
1 Peng Hua,Zhou Zhibin,Cui Rongqiang,Ye Qinghao,Pang Qianjun,Chen Mingbo,and Zhao Liang(Institute of Solar Energy,Shanghai Jiaotong University,Shanghai 200240,China);Research on Ⅲ-Ⅴ Bandgap Graded Solar Cells[J];Chinese Journal of Semiconductors;2005-05
2 He Yuhang; Chu Yiming; Wang Zhonghuai;Liu Hsiangna and Bat Chunli( Amorphous Physics Research Lab. Beijing University of Aeronautics and Astronautics, Beijing 100083)( Beijing Laboratory of Electron Microscopy, The Chinese Academy of Seicnees Beijing 1000;The Characteristics of Interfaces Morphology of Nano-Crystalline Silicon Films[J];CHINESE JOURNAL OF SEMICONDUCTORS;1994-01
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