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《Journal of Functional Materials and Devices》 2011-06
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The design and simulation of four-junction solar cell InGaP/GaAs/GaInAsN/Ge

ZHANG Guo-fang,TANG Ji-yu,CHEN Jun-fang,ZHOU Fu-cheng,Lin Bang-xi,LIAO Jian-jun (College of Physics and Telecommunication,South China Normal University,Guangzhou 510006,China)  
With the development of the multi -junction solar cell technology,four -junction InGaP/GaAs (InGaAs)/(New material)/Ge solar cells are a widely - pursued route toward higher efficiencies.Quaternary compound material Ga_(1-x)In_x As_(1-y)N_y has the ability to achieve a bandgap of 0.95~1.05eV,furthermore, with an optical composition it is lattice - matched to GaAs and Ge,which is the most promising next - generation solar cells material.In the paper,We have designed and simulated the InGaP/GaAs/ GalnAsN/Ge solar cell structure with the software Apsys for the first time.Compared with the traditional structure InGaP/GaAs/Ge,InGaP/GaAs/GaInAsN/Ge achieve a higher conversion efficiency.
【Fund】: 广东省自然科学基金(10151063101000048)
【CateGory Index】: TM914.4
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