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《Research & Progress of Solid State Electronics》 1985-01
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A Study on MOS Bootstrapping Circuits from Source and Drain

Jin Gongjiu, Sun Guoliang (Nanjing Institute of Technology)  
The processes of the bootstrapping from source and drain are analyzed in detail based on the capacitor model of MOSFET and it is pointed out that the gate capacitance mainly plays a part of coupling. The formulae of the bootstrap ratio and the rise time thus derived are then compared with experimental measurements of the test circuits fabricated. It is appropriate to take about two times of gate capacitance of load transistor as bootstrap capacitor for the case of bootstrapping from source, and it is not necessary to place a bootstrap capacitor for the case of bootstrapping from drain.
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