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《Research & Progress of Solid State Electronics》 1985-01
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A Study on MOS Bootstrapping Circuits from Source and Drain

Jin Gongjiu, Sun Guoliang (Nanjing Institute of Technology)  
The processes of the bootstrapping from source and drain are analyzed in detail based on the capacitor model of MOSFET and it is pointed out that the gate capacitance mainly plays a part of coupling. The formulae of the bootstrap ratio and the rise time thus derived are then compared with experimental measurements of the test circuits fabricated. It is appropriate to take about two times of gate capacitance of load transistor as bootstrap capacitor for the case of bootstrapping from source, and it is not necessary to place a bootstrap capacitor for the case of bootstrapping from drain.
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【Co-citations】
Chinese Journal Full-text Database 10 Hits
1 HUANG Youshu;HE Qingyi;LIN Peng;ZHU Weian;LU Guolin(Optoelectronic Instruments institute,Chongqing University,Chongqing 630044);Self-scanning photodiode area array with high frame rate[J];SEMICONDUCTOR OPTOELECTRONICS;1995-02
2 Wang Guihua/Harbin Institute of Technology, HarbinYu Dun/Harbin Institute of Technology, HarbinWang Yaolin/Harbin Institute of Technology, Harbin;Analysis of pH-ISFET Temperature Characteristics and Temperature Compensation Approaches[J];Chinese Journal of Semiconductors;1988-03
3 ;The Probe Techniques for electric microarea-testing[J];;1996-02
4 Hou Chenggui(Hebei University);A CMOS Full-Wave Rectifying Circuit which can Improve Converting Precision for Small Signals[J];TRANSACTIONS OF CHINA ELECTROTECHNICAL SOCIETY;1995-04
5 Huang Youshu;He Qingyi;Zhu Weian;Lu Guolin(The Open Laboratory for Optoelectronic Technology & Systems,The State Education Commission of China.Chongqing University,Chongqing,630044);Study of Self-Scanning Photodiode Array with PIN Structure[J];OPTO-ELECTRONIC ENGINEERING;1995-04
6 GAO Yong~1 ZHANG Xin~ 1,2 LIU Mengxin~1 AN Tao~1 WANG Cailin~1 XING Kunshan~2( ~1 Xi′an University of Technology,Xi′an, 710048,CHN)( ~2 East China Institute of Photo-Electron IC,Bengbu,Anhui,233042,CHN);Research on SOI Self-heating Effect Based on the Method of Equivalent Capacitance[J];Research & Progress of SSE Solid State Electronics;2006-04
7 Liu Yuling Liu Zhifu;The Analysis and Research of SubstrateMaterial for MOS.CCD.VLSl[J];;1988-02
8 Xu Weijie Liu Lu;An Experiment Investigation of Field-Effect Transistors In the Region of Law Temperature[J];Journal of Natural Science of Heilongjiang University;1993-01
9 Zhou Zhiren Wan Jiqing Wu Zhuowen Liu Fangming(Department of Applied Physics,Hunan Univ);Logic Design for Four Characteristic CMOS D-Type Flip-Flop[J];JOURNAL OF HUNAN UNIVERSITY(NATURNAL SCIENCES);1994-04
10 Xu Xicheng;OPERATION PRINCIPLES AND LAYOUT DESIGN OF THE HJ1310 PHASE-LOCKED LOOP FM STEREO DEMODULATOR[J];Journal of South China Normal University(Natural Science);1985-01
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