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《Research & Progress of Solid State Electronics》 1991-04
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Effect of Composition and Thermal History on Deep Doner EL2 in LEC GaAs

Yang Ruixia (Hebei Institute of Technology, Tianjin, 300130) Li Guangping (Tianjin Electronic Materials Research Institute, 300220)  
The longitudinal and radial distributions of EL2 in undoped LEG GaAs ingorts with different compositions ware determined by infrared absorption measurement. The changes of EL2 concentrations were analyzed using a fast cooling method after heat treatment to simulate various cooling processec after crystal growth. The generation process of EL2 and the factors affecting the EL2 concentration were also discussed.
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【References】
Chinese Journal Full-text Database 1 Hits
1 Yang Ruixia(Hehei Institute of Technology, Tianjin, 300130);Study on Improving Mechanism of Uniformity of EL2Distribution in Undoped LEC SI GaAs by Heat Treatment[J];RESEARCH & PROGRESS OF SOLIA STATE ELECTRONICS;1994-01
【Secondary References】
Chinese Journal Full-text Database 2 Hits
1 LIU Li feng, YANG Rui xia, GUO Hui (School of Electrical Engineering and Information Technology,Hebei University of Technology,Tianjin 300130,China);Study on Mechanism of Efects on El2 in GaAs by Annealing and Quenching[J];Infrared Technology;2002-01
2 Liu Hongyan Sun Weizhong Wang Na Hao Qiuyan Liu Caichi(Institute of Information Function Materials,Hebei University of Technology,Tianjin 300130);Investigation of the native defects in LEC SI-GaAs by optical microscopy[J];Modern Instruments;2008-03
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