Full-Text Search:
Home|Journal Papers|About CNKI|User Service|FAQ|Contact Us|中文
《Research & Progress of Solia State Electronics》 2002-03
Add to Favorite Get Latest Update

Effects of As Pressure Duing Annealing on Defects for Semi-insulating GaAs

YANG Ruixia (Hebei University of Technology, Tianjin, 300130, CHN) LAI Zhanping (Tianjin Electronic Materials Reserach Institute, 300192, CHN)  
Undoped semi insulating LEC GaAs crystal wafers have been annealed at 950 °C and 1 120 °C under various As gas pressures. The duration of the annealing is 2~14 hrs.It is found that the interior stoichiometry of GaAs crystal wafers can be modified by annealing and the modification in stoichiometry can results in respective changes in intrinsic defects and electrical properties. The bulk resistivity (deeper than 150 μm beneath surface) increases by about 50%, and the Hall mobility decreases by about 70% after an annealing at 950 °C for 14 hrs under low As gas pressure. These changes in the electrical parameters originate from the creationg of an intrinsic acceptor defect species in interior region of the crystal wafers during annealing. The generation of this intrinsic acceptor defect is due to the occurrence of the out diffusion of As interstitials during the high temperature process, which can be suppressed by increasing the As gas pressure during annealing. By evacuated annealing of 2~8 hrs at 1 120 °C followed by fast cooling, the concentration of main native donor defect EL2 in sample can be decreased by nearly one order of magnitude. The decrease in EL2 concentration can also be suppressed by increasing As gas pressure during annealing, and the suppression effect is due to the occurrerce of in diffusion of As interstitials under high temperature and high As gas pressure.
【Fund】: 河北省自然科学基金资助项目 (编号 60 10 48);; 天津市自然科学基金资助项目 (编号 2 0 3 80 14 11)
【CateGory Index】: TN304.2
Download(CAJ format) Download(PDF format)
CAJViewer7.0 supports all the CNKI file formats; AdobeReader only supports the PDF format.
【References】
Chinese Journal Full-text Database 1 Hits
1 LI Xi-yang DAI Hui-ying SHI Wei HOU Jun-yan YANG Li-na (Project University of Airforce,Xi'an University of Technology,Xi'an 710073,China);Dark Resistivity of GaAs Photoconductive-switch Before and After Break Down[J];Journal of Atmospheric and Environmental Optics;2006-06
【Citations】
Chinese Journal Full-text Database 1 Hits
1 YANG RUIXIA(Hebei Institute of Technology)LIGUANGPING WANG QIN(Tianjin Electronic Materials Research lnstitute);DISTRIBUTION OF TOTAL EL2 CONCENTRATION AND ITS FERMI OCCUPANCY FUNCTION IN UNDOPED LECSI GaAs[J];JOURNAL OF APPLIED SCIENCES;1995-02
【Co-citations】
Chinese Journal Full-text Database 5 Hits
1 Yang Ruixia (Hebei University of Technology, Tianjin,300130,CHN) Li Guangping (Tianjin Electronic Material Research Institute, 300192,CHN);Dependence of the Electrical Properties on EL2 Concentration and Carbon Acceptor Concentration in Undoped Semi insulating LEC GaAs[J];RESEARCH & PROGRESS OF SOLIA STATE ELECTRONICS;1999-04
2 YANG Rui-xia, LIU Li-feng, GUO Hui (School of Electrical Engineering and information Technology Hebei University of Technology, Tianjin 300130, China );Effects of Quenching on Deep Donor Defect EL_2 in GaAs[J];Journal of Hebei University of Technology;2001-01
3 LIU Li-Feng, YANG Rui-Xia, GUO Hui (School of Electrical Engineering and Information Technology, Hebei University of Technology Tianjin 300130, China);The Annealing Effects on Electronic Properties for Undoped Semi-insulating LECGaAs[J];Journal of Hebei University of Technology;2001-05
4 LIU Li feng, YANG Rui xia, GUO Hui (School of Electrical Engineering and Information Technology,Hebei University of Technology,Tianjin 300130,China);Study on Mechanism of Efects on El2 in GaAs by Annealing and Quenching[J];Infrared Technology;2002-01
5 Yang Ruixia1,Zhang Fuqiang2 and Chen Nuofu2 (1.Institute of Electricity and Information, Hebei University of Tech nology,Tianjin 300130,China;2.Institute of Semiconductors, Chinese Academy of Sc iences,Beijing 100083,China);Effects of Annealing on Native Defects and Electrical Properties of Undoped Semi-insulating LEC GaAs During Annealing[J];Chinese Journal of Rare Metals;2001-06
【Co-references】
Chinese Journal Full-text Database 10 Hits
1 HUANG Yunian(Beijing Institute of Applied Physics and Computational Mathematics, Beijin 100088, CHN);High power microwave generation using photoconductive semiconductor switches[J];SEMICONDUCTOR OPTOELECTRONICS;1998-02
2 XIE Zi-li(Nanjing Electronic Device Institute,Nanjing 210016,China);Investigation on the annealed behavior of the deep level trap in LEC SI-GaAs[J];Semiconductor Technology;2002-07
3 HOU Jun-yan1,DAI Hui-ying1,2 , SHI Wei2,DONG Qiu-Xia1 ( 1. Science Institute, Air Force Engineering University, Xi' an 710051, China; 2. Department of Applied Physics, Xi' an University of Technology, Xi' an 710048, China);Compare of Scattering Mechanisms in SI GaAs Photoconductive Switch[J];Semiconductor Technology;2006-12
4 Sun Niefeng,Chen Xudong,Zhao Youwen, Yang Guangyao,Liu Silin,Sun Tongnian (Hebei Semiconductor Research Institute,Shijiazhuang 050051);Investigation on progress of InP Crystal in Application[J];SEMICONDUCTOR INFORMATION;1998-04
5 SHI Wei1, ZHAO Wei2, SUN Xiao\|wei3 and Lam Yee Loy\+3(1\ Applied Physics Department, Xi'an University of Technology, Xi'an\ 710048, China) (2\ State Key Laboratory of Transient Optics and Technology, Xi'an\ 710068, China) (3\ Division of Microelectroni;Transit Properties of High Power Ultra\|Fast Photoconductive Semiconductor Switch[J];CHINESE JOURNAL OF SEMICONDUCTORS;2000-05
6 Xu Yuesheng 1,Zhang Chunling 1,Liu Caichi 1,Tang Lei 1,Wang Haiyun 1 and Hao Jingchen 2(1 Information Function Institute,Hebei University of Technology,Tianjin 300130,China) (2 The 13th Electrons Institute of the Ministry of Information Industry,Shijiazhuang 050051,China);Crystal Defects in Semi-Insulation Gallium Arsenide[J];Chinese Journal of Semiconductors;2003-07
7 Shi Wei and Tian Liqiang(Department of Applied Physics,Xi'an University of Technology,Xi'an 710048,China);Breakdown Characteristics of Semi-Insulating GaAs Photoconductive Switch[J];Chinese Journal of Semiconductors;2004-06
8 Shi Wei,Dai Huiying,and Zhang Xianbin(Department of Applied Physics,Xi’an University of Technology,Xi’an 710048,China);Peculiar Photoconduction in Semi-Insulating GaAs Photoconductive Switch Triggered by 1064nm Laser Pulse [J];Chinese Journal of Semiconductors;2005-03
9 Xu Bo; Wang Zhanguo; Wan Shouke; Sun Hong; Zhang Hui;Yang Xiquan and Lin Lanying(Institute of Semiconductors, The Chinese Academy of Sciences. Semiconductor Materials Science Laboratory, The Chinese Academy of Sciences Beijing 100083)I. P. Koutzarov(Semic;New Explanation to EPC Phenomenon in EL2 Photoquenching[J];CHINESE JOURNAL OF SEMICONDUCTORS;1994-05
10 Shi Wei(Xi′an University of Technology, Xi′an 710048)Liang Zhenxian(Xi′an Jiaotong University, Xi′an 710049);Optically Activated Charge Domain Phenomena in High Gain Ultra Fast High Voltage GaAs Photoconductive Switches[J];CHINESE JOURNAL OF SEMICONDUCTORS;1999-01
【Secondary References】
Chinese Journal Full-text Database 1 Hits
1 LIU Juan,LI Yin-xin,SU Wei,SHI Shi-tai(Institute of Electronic Engineering,China Academy of Engineering Physics,Mianyang 621900,China);Research on breakdown character of coplanar GaAs photoconductive switch[J];Transducer and Microsystem Technologies;2009-02
©2006 Tsinghua Tongfang Knowledge Network Technology Co., Ltd.(Beijing)(TTKN) All rights reserved