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《Research & Progress of Solia State Electronics》 2002-03
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Effects of As Pressure Duing Annealing on Defects for Semi-insulating GaAs

YANG Ruixia (Hebei University of Technology, Tianjin, 300130, CHN) LAI Zhanping (Tianjin Electronic Materials Reserach Institute, 300192, CHN)  
Undoped semi insulating LEC GaAs crystal wafers have been annealed at 950 °C and 1 120 °C under various As gas pressures. The duration of the annealing is 2~14 hrs.It is found that the interior stoichiometry of GaAs crystal wafers can be modified by annealing and the modification in stoichiometry can results in respective changes in intrinsic defects and electrical properties. The bulk resistivity (deeper than 150 μm beneath surface) increases by about 50%, and the Hall mobility decreases by about 70% after an annealing at 950 °C for 14 hrs under low As gas pressure. These changes in the electrical parameters originate from the creationg of an intrinsic acceptor defect species in interior region of the crystal wafers during annealing. The generation of this intrinsic acceptor defect is due to the occurrence of the out diffusion of As interstitials during the high temperature process, which can be suppressed by increasing the As gas pressure during annealing. By evacuated annealing of 2~8 hrs at 1 120 °C followed by fast cooling, the concentration of main native donor defect EL2 in sample can be decreased by nearly one order of magnitude. The decrease in EL2 concentration can also be suppressed by increasing As gas pressure during annealing, and the suppression effect is due to the occurrerce of in diffusion of As interstitials under high temperature and high As gas pressure.
【Fund】: 河北省自然科学基金资助项目 (编号 60 10 48);; 天津市自然科学基金资助项目 (编号 2 0 3 80 14 11)
【CateGory Index】: TN304.2
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