Full-Text Search:
Home|Journal Papers|About CNKI|User Service|FAQ|Contact Us|中文
《Research & Progress of Solia State Electronics》 2002-04
Add to Favorite Get Latest Update

ZnO Thin Film Prepared by Low Pressure MOCVD Method

YE Jiandong GU Shulin ZHU Shunmin HU Liqun CHEN Tong QIN Feng ZHANG Rong SHI Yi SHEN Bo JIANG Ruolian ZHENG Youdou (Department of Physics,Nanjing University,210093,CHN)  
High quality c axis oriented single crystal ZnO films have been successfully grown on the (0002) sapphire substrates by Low Pressure MOCVD using Zn(C 2H 5) 2 and CO 2 as sources.The crystallinity and the orientation of the films were studied by X ray diffraction technique.The lattice constant for the ZnO film on the sapphire substrate is 0.5218 nm,which is a bit higher than the reported value in ZnO film.The optical band gap is about 3.245 eV by simulating the data of the absorption spectrum.The edge emission band has been observed obviously in the PL spectrum and the origin of the blue emission band has been also revealed and discussed.
【Fund】: 国家重点基础研究规划 (G0 0 1CB3 0 95 ) ;; 国家自然科学基金;; 国家 863计划 (2 0 0 2 AA3 110 60 )
【CateGory Index】: TN304.05
Download(CAJ format) Download(PDF format)
CAJViewer7.0 supports all the CNKI file formats; AdobeReader only supports the PDF format.
【References】
Chinese Journal Full-text Database 2 Hits
1 WANG Rui-hua,LI Huai-xiang,ZHANG Hua,ZHAO Jing(Chemical Functional Materials Laboratory,Institute of Semiconductors,Shandong Normal University,Jinan 250014,China);A novel method for preparing zinc oxide nanoparticals with photoluminescence at room temperature[J];Micronanoelectronic Technology;2004-02
2 ZHANG Yi-qing,WANG Chang-zheng,ZHANG Pei-ming,ZHENG Li-bo,XIAO Xiao-guang,ZHANG Dong (School of Physics Science and Information Engineering,Liaocheng University,Liaocheng 252059,China);Structure and optical properties of ZnO thin films grown by laser molecular beam epitaxy[J];Journal of Functional Materials;2008-06
【Co-citations】
Chinese Journal Full-text Database 10 Hits
1 WU Xiu-long~1, MENG Jian~1, KE Dao-ming~1, CHEN Jun-ning~1,SHI Long-xing~2, SUN Wei-feng~2 (1.Department of Electronic Engineering and Information Science, Anhui University, Hefei230039,China; 2.National ASIC System Engineering Research Center, Southeast University, Nanjing210096,China);Analysis of LDMOS breakdown voltage after using field plate[J];Journal of Anhui University(Natural Sciences);2004-01
2 Zhou Guanshan No.014 Center under the Ministry of Aircraft Industry Luoyang 471009;Test on Impurity Concentration and Profile of Cd Diffusion in InSb By Using C-V Method[J];Semiconductor Optoelectronics;1991-04
3 Guan Hui Zhu Changchun (Dept.of Elecfronics Engineering,Xi'an Jiaotong University,Xi'an 710049);Study on Si Field Emission Photodetector and Si-cones Cathode Technology[J];Semiconductor Optoelectronics;1993-02
4 Liu Jungang; Li Ping (Chongqing Optoelectronics Research Institure,Yongchuan 632163);A CCD Imaging Device with 756 ×581 Pixels[J];SEMICONDUCTOR OPTOELECTRONICS;1994-02
5 Liu Jungang; Zhao Wenbo; Li Ping(Chongqing Optoelectronics Research Institute. Yongchuan 632163);A 600(V)×500(H) Element Frame Transfer CCD Image Device[J];SEMICONDUCTOR OPTOELECTRONICS;1994-04
6 LI Guozheng;ZHANG Hao (Dept. of Electronic Engineering,Xi'an Jiaotong University,Xi'an 710049);Theoretical calculation of internal quantum efficiency of Ge_xSi_(1-x)/Si IR detectors[J];SEMICONDUCTOR OPTOELECTRONICS;1995-04
7 WANG Tao,WANG Zheng-zhi (Automation College, National University of Defence Technology, Changsha 410073, China);Comparison of Surface Passivation Schemesfor Silicon Solar Cells[J];Semiconductor Technology;2006-07
8 HOU Jun-yan1,DAI Hui-ying1,2 , SHI Wei2,DONG Qiu-Xia1 ( 1. Science Institute, Air Force Engineering University, Xi' an 710051, China; 2. Department of Applied Physics, Xi' an University of Technology, Xi' an 710048, China);Compare of Scattering Mechanisms in SI GaAs Photoconductive Switch[J];Semiconductor Technology;2006-12
9 Shi Jinxing (Dept.of Applied Physics and Heat Eng.,Central South Univ.of Technology,Changsha 410083);Ohmic Contacts to GaN[J];SEMICONDUCTOR INFORMATION;1999-05
10 Yang Yongjun , Wang Changhe,Bai Shuhua(The 13th Institute,Ministry of EI, Shijiazhuang, 050051);Investigation of Low Frequency Low Noise Bipolar Transistors Working at Liquid Nitrogen Temperature[J];SEMICONDUCTOR INFORMATION;1995-03
China Proceedings of conference Full-text Database 1 Hits
1 Wu min, Huang Zhao Hong Laboratory of Photonic Information Technology, SCNU, Guangzhou China;InSb Magnetoresistance IR-Photoelectric Sensor and It's Characteristic Research[A];[C];2006
【Co-references】
Chinese Journal Full-text Database 10 Hits
1 WANG Xin qiang,DU Guo tong,JIANG Xiu ying,WANG Jin zhong,YANG Shu ren (National Integrated Optoelectronics Laboratory,Department of Electronic Engineering,Jilin University,Changchun 130023,China);Advances in Research on ZnO Film[J];SEMICONDUCTOR OPTOELECTRONICS;2000-04
2 LU Jian guo, YE Zhi zhen, WANG Lei (State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, CHN);Recent Advance in Research on Ultraviolet Stimulated Emission for ZnO Films[J];Semiconductor Optoelectronics;2002-03
3 Fu Zhuxi, Lin Bixia, Guo Changxin, Liao Guihong(Department of Physics, University of Science and Technology of China, Hefei\ 230026);Luminescent Spectrum of ZnO Films Deposited on Si Substrates[J];CHINESE JOURNAL OF SEMICONDUCTORS;1999-09
4 LIU Shu-man 1,LIU Feng-qi 1,GUO Hai-qing 2,ZHANG Zhi-hua 2 and WANG Zhan-guo 1[KH2D][WT6BX](1 Laboratory of Semiconductor Materials Science,Institute of Semiconductors, The Chinese Academy of Sciences,Beijing 100083,China) (2 State Key Lab;Investigation on Structure and Luminescenc of ZnO∶Tb Nanocrystals[J];Chinese Journal of Semiconductors;2001-04
5 YE Zhi-zhen,CHEN Han-hong,LIU Rong,ZHANG Hao-xiang and ZHAO Bin-hui(National Key Laboratory of Silicon Materials,Zhejiang University,Hangzhou 3100 27,China);Structure and PL Spectrum of ZnO Films Prepared by DC Reactive Magnetron Sputtering[J];Chinese Journal of Semiconductors;2001-08
6 MEI Zeng-xia, ZHANG Xi-qing, YI Li-xin, ZHAO Su-ling, WANG Jing, LI Qing-fu, HAN Jian-min( Institute of Optoelectronic Technology, Northern Jiaotong University, Beijing 100044, China ; Key Laboratory of Information Storage and Display, Beijing 100044;Preparation and Photoluminescent Properties of ZnO Thin Film[J];Chinese Journal of Luminescence;2002-04
7 XIAO Zhiyan1, ZHANG Weili1, ZHANG Xitian1,2, GUAN Chengxiang1, LIU Yichun2, ZHANG Jiying2(1. Department of Physics, Harbin Normal University, Harbin150080, China;chun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun130033, China);Excitonic Luminescence Properties of Nanocrystalline ZnO Films[J];Chinese Journal of Luminescence;2003-04
8 LIN Bi-xia, FU Zhu-xi, LIAO Gui-hong (Department of Physics, University of Science and Technology of China, Hefei 230026, China);Effect of Zn/O on Photoluminescence of ZnO on Si[J];Chinese Journal of Luminescence;2005-02
9 Guo Changxin Fu Zhuxi Shi Chaoshu (Department of Physics, University of Science and Technology of China, Hefei 230026);SUPERLINEAR INCREASE PHENOMENON OF UV LUMINESCENCE OF ZnO FILM UNDER CATHODOLUMINESCENT EXCITATION[J];CHINESE JOURNAL OF LUMINESCENCE;1998-03
10 L Jian guo, YE Zhi zhen (State Key Laboratory of Silicon Material, Zhejiang University, Hangzhou 310027, China);Advance in research on ZnO thin films[J];Journal of Functional Materials;2002-06
【Secondary References】
Chinese Journal Full-text Database 5 Hits
1 YU Hai-Li,ZHANG Wen-Gong*,HUANG Xiu-Xiu,LIN Feng-Long(Institute of Polymer Science,College of Chemistry & Materials Science,Fujian Normal University,Fuzhou 350007,China);Successive Preparation of High Blue Fluorescence of Decorated Nano Zinc Oxide Ethanol Sol by Pulsed Laser Ablation[J];Chemical Journal of Chinese Universities;2007-12
2 WANG Han, ZHAO Feng-qi, GAO Hong-xu (Xi′an Modern Chemistry Research Institute, Xi′an 710065, China);Development in the Preparation of Nano-scale Combustion Catalysts Used in Solid Rocket Propellant[J];Energetic Materials;2005-05
3 WEI Shao-dong(East China Engineering Science and Technology Co.,Ltd,Hefei 230024,China);Current Situation and Development of Nano-ZnO[J];Chemical Engineering Design Communications;2006-04
4 LIU Cheng-yan LI Zai-yuan LIU Hai-ying ZHAI Yu-chun;Precipitation and conversion process for preparing CuO nano fiber[J];China Nonferrous Metallurgy;2006-03
5 WEI Shao-dong (East China Engineering Science and Technology Co., Ltd., Hefei 230024, China);Current Situation and Development of Nano-ZnO[J];Chemical Intermediates;2006-11
©2006 Tsinghua Tongfang Knowledge Network Technology Co., Ltd.(Beijing)(TTKN) All rights reserved