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《Research & Progress of Solia State Electronics》 2002-04
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ZnO Thin Film Prepared by Low Pressure MOCVD Method

YE Jiandong GU Shulin ZHU Shunmin HU Liqun CHEN Tong QIN Feng ZHANG Rong SHI Yi SHEN Bo JIANG Ruolian ZHENG Youdou (Department of Physics,Nanjing University,210093,CHN)  
High quality c axis oriented single crystal ZnO films have been successfully grown on the (0002) sapphire substrates by Low Pressure MOCVD using Zn(C 2H 5) 2 and CO 2 as sources.The crystallinity and the orientation of the films were studied by X ray diffraction technique.The lattice constant for the ZnO film on the sapphire substrate is 0.5218 nm,which is a bit higher than the reported value in ZnO film.The optical band gap is about 3.245 eV by simulating the data of the absorption spectrum.The edge emission band has been observed obviously in the PL spectrum and the origin of the blue emission band has been also revealed and discussed.
【Fund】: 国家重点基础研究规划 (G0 0 1CB3 0 95 ) ;; 国家自然科学基金;; 国家 863计划 (2 0 0 2 AA3 110 60 )
【CateGory Index】: TN304.05
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