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《Research & Progress of Solid State Electronics》 2004-02
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Bulk Single Crystal Growth of Silicon-Germanium

ZHANG Weilian ZHAO Hongsheng CHEN Hongjian SUN Junsheng ZHANG Enhuai (Hebei University of Technology Semiconductor Material Institute, Tianjin, 300130, CHN)  
Si single crystals of doping Ge up to 0.1~5.0wt% were grown using ring permanent magnetic Czochralski technology (PMCZ method). The diameter of crystal is 65 mm and  52 mm. In order to control homogeneity of Ge distribution in Si, the crystal growth rate was lowed to less than 0.5 mm/min. Distribution of Ge in crystal was observed by SEM and SIMS. The results indicate that the homogeneity of Ge distribution was improved with magnetic field than without a magnetic field, because thermal convection was inhibited to a certain extent by magnetic. We also observed oxygen micro-precipitation in the SiGe crystal. The phenomenon is different from that CZSi without doped Ge resulted from a larger growth rate of 1~ 1.5~2.0 mm/min and cooling rate for the CZSi without doped Ge. Presented is the crystallization of branch type in the tail of crystal owing to a very high concentration of Ge in Si melt leading to the constitutional super-cooling.
【Fund】: 国家自然科学基金资助项目 ( 5 9772 0 3 7) ;; 河北省自然科学基金资助项目 ( 5 0 0 0 16)
【CateGory Index】: TN305.2
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