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《Research & Progress of SSE Solid State Electronics》 2006-04
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Research on SOI Self-heating Effect Based on the Method of Equivalent Capacitance

GAO Yong~1 ZHANG Xin~ 1,2 LIU Mengxin~1 AN Tao~1 WANG Cailin~1 XING Kunshan~2( ~1 Xi′an University of Technology,Xi′an, 710048,CHN)( ~2 East China Institute of Photo-Electron IC,Bengbu,Anhui,233042,CHN)  
At present normal SOI device has problem in high-temperature performance.In this paper, a new point of view is advanced via buried insulator thickness being discounted to SiO_2 thickness using method of equivalent capacitance based on different dielectric constant of buried insulator materials.From another aspect,theoretical basis is perfectly explained for bringing down self-heating effect.Also,a new SOI structure with AlN as a buried insulator under the channel of device is reported,perfectly proving that the new point of view is correct from dielectric constant angles. It is concluded that the reduction of equivalent buried insulator thickness based on high dielectric constant is beneficial to conduction of heat,and high thermal conductivity of buried insulator materials improves the capacity of conduction of heat, effectively bring down self-heating effect.
【CateGory Index】: TN47
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【Citations】
Chinese Journal Full-text Database 5 Hits
1 YAN Tao ZHANG Guoyan HUANG Ru WANG Yangyuan (Institute of Microelectronics, Peking University, Beijing, 100871;Characteristic Analysis of Varactors Based on SOI[J];Acta Scicentiarum Naturalum Universitis Pekinesis;2004-05
2 FENG Yaolan WEI Tongli ZHANG Haipeng SONG Anfei LUO Lan (Microelectronics Center,Sou theast University,Nanjing,210096,CHN);Optimum Design of High-temperature Bulk-silicon CMOS Inverter in Wide Temperature Range[J];Research & Progress of Solia State Electronics;2001-03
3 Du Shuai Gao Longqiao Liu Zheng Li Fa Li Longtu * (Beijing Vacuum Electronic Research Institute) ( *Department of Materials Science and Engineering,Tsinghua University);THE DIELECTRIC PROPERTIES OF AlN CERAMICS[J];JOURNAL OF THE CHINESE CERAMIC SOCIETY;1998-04
4 XIE Xiao-jun, CHENG Yong-hong , CUI Hao, CHEN Xiao-lin, FENG Wu-tong (State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an 710049,China);Study on Dielectric Property with Temperature Based on the Molecule Simulation Technique[J];Journal of Sichuan University (Natural Science Edition);2005-S1
5 MEN Chuan-ling 1,2 ,XU Zheng 1,AN Zheng-hua 2,LIN Cheng-lu 2 (1.College of Material Science and Engineering,Tongji University,Shanghai 200092,China; 2.State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,the Chinese Academy of Sciences,Shanghai 200050,China);Residual Strain of Silicon-on-AlN Novel Structure[J];Journal of Tongji University;2003-03
【Co-citations】
Chinese Journal Full-text Database 10 Hits
1 ZHANG Xin1,2,GAO Yong1,LIU Meng-xin1,AN Tiao1,WANG Cai-lin1,Xing Kun-shan2(1.Autonomous and Engineering School of Xi'an University of Technology,Xi'an 710048,China; 2.East China Institute of Photo-Electron IC,Bengbu 233042,China);Research on SOI buried insulator structure for high temperature operating conditions[J];Ordnance Material Science and Engineering;2006-05
2 Wang Guihua/Harbin Institute of Technology, HarbinYu Dun/Harbin Institute of Technology, HarbinWang Yaolin/Harbin Institute of Technology, Harbin;Analysis of pH-ISFET Temperature Characteristics and Temperature Compensation Approaches[J];Chinese Journal of Semiconductors;1988-03
3 Liu Mengxin 1,,Gao Yong1,Zhang Xin 1,2,Wang Cailin1,and Yang Yuan1(1 Department of Electronic Engineering,Xi’an University of Technology,Xi’an 710048,China) (2 East China Institute of Photo-Electron IC,Bengbu 233042,China);Simulation and Optimization of FD SOI CMOS Devices at High Temperatures[J];Chinese Journal of Semiconductors;2006-06
4 ;The Probe Techniques for electric microarea-testing[J];;1996-02
5 ZHANG Wen-kai,WANG Hong-wei,QI Chen-jie (School of Applied Science,Beijing Information Science and Technology University,Beijing 100192,China);NPN superhigh frequency small power transistor array design[J];Journal of Beijing Information Science & Technology University;2012-02
6 FANG Zhenyu,CAO Feng,ZHANG Changrui,WANG Siqin,LI Bin,YANG Bei,LI Duan(Key Laboratory of Novel Ceramic Fibers & Composites,College of Aerospace & Materials Engineering,National University of Defense Technology,Changsha 410073);Progress on High Temperature Nitride Based Ceramic Wave-transparent Materials[J];Materials Review;2011-13
7 Hou Chenggui(Hebei University);A CMOS Full-Wave Rectifying Circuit which can Improve Converting Precision for Small Signals[J];TRANSACTIONS OF CHINA ELECTROTECHNICAL SOCIETY;1995-04
8 WU Huazhong1, LI Xiaoyun2, QIU Tai2 (1. Department of Chemistry and Chemical Engineering Minjiang University, Fuzhou 350108, China; 2. College of Materials Science and Engineering, Nanjing University of Technology, Nanjing 210009, China);Effect of TiO_2 on characteristics of AlN-C composite material[J];Electronic Components and Materials;2009-07
9 ZHAO Hai-yang WANG Wei-min (State Key Laboratory of Advanced Technology for Materials Synthesis and Processing,Wuhan University of Techndogy,Wuhan 430070,China);Study on the Progress of Fabricating AlN-BN Composite Cramics[J];Bulletin of the Chinese Ceramic Society;2007-04
10 WANG Jie,ZHANG Zhan-ying,LV Xin-lu(School of Materials Sciences and Engineering,Henan Polytechnic University,Jiaozuo 454000,China);Current Research Status and Prospect of Synthesis Methods of Aluminum Nitride Powder[J];Bulletin of the Chinese Ceramic Society;2010-05
China Proceedings of conference Full-text Database 3 Hits
1 ;The Application of Molecule Simulation Technique in Research of Dielectric Property of Polyethylene[A];[C];2011
2 LI Fa,LIU Zheng,LU Yan-ping, LIU Hui-qing,GAO Long-qiao (Beijing Vacuum Electronics Research Institute, Beijing 100016, China);Investigation on the Development of High Thermal Conductivity AIN Ceramics and Its Application[A];[C];2002
3 LU Wan-ze;LI Xiao-yun;QIU Tai;YUAN Wen-jie;College of Materials Science and Engineering,Nanjing Tech University;;Effects of Y_2O_3 Content on Properties of AlN-Glassy Carbon Composites by Hot-Pressing Sintering[A];[C];2014
【Secondary Citations】
Chinese Journal Full-text Database 3 Hits
1 Feng Yaolan;Zhai Shubing(Microelectronics Center,Southeast University,Nanjing,210096);The Simnulation for High Temperature Characteristics of MOS Devices at Wide Temperature Range(27~300℃)[J];JOURNAL OF ELECTRON DEVICES;1995-04
2 Ke Daoming Feng Yaolan Tong Qinyi (Microelectronics Center, Southeast University, Nanjing 210018) Ke Xiaoli (The Planning Committee of Hefei City, Hefei 230061);TRANSIENT CHARACTERISTIC ANALYSIS OF HIGH TEMPERATURE CMOS DIGITAL INTEGRATED CIRCUITS[J];;1994-01
3 Ke Daoming (Physics Department,U niversity of Sci. &. Tech. of China , Hefei ,230026) Tong Qinyi,Feng Yaolan (Microelectronics Center, South east U niversity, Nanjing ,210018) Liao Tiankang (The Academy of Engineering Physics of China, Mianyang, Sichuan, 610003);DC Transfer Characteristic Analysis of High Temperature CMOS Digital Integrated Circuits[J];Research & Progress of Solid State Electronics;1993-04
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