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《Research & Progress of SSE Solid State Electronics》 2006-04
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Research on SOI Self-heating Effect Based on the Method of Equivalent Capacitance

GAO Yong~1 ZHANG Xin~ 1,2 LIU Mengxin~1 AN Tao~1 WANG Cailin~1 XING Kunshan~2( ~1 Xi′an University of Technology,Xi′an, 710048,CHN)( ~2 East China Institute of Photo-Electron IC,Bengbu,Anhui,233042,CHN)  
At present normal SOI device has problem in high-temperature performance.In this paper, a new point of view is advanced via buried insulator thickness being discounted to SiO_2 thickness using method of equivalent capacitance based on different dielectric constant of buried insulator materials.From another aspect,theoretical basis is perfectly explained for bringing down self-heating effect.Also,a new SOI structure with AlN as a buried insulator under the channel of device is reported,perfectly proving that the new point of view is correct from dielectric constant angles. It is concluded that the reduction of equivalent buried insulator thickness based on high dielectric constant is beneficial to conduction of heat,and high thermal conductivity of buried insulator materials improves the capacity of conduction of heat, effectively bring down self-heating effect.
【CateGory Index】: TN47
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