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《Journal of Chemical Engineering of Chinese Universities》 2006-06
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The Influences of Boron-doping Concentration on the Electrochemical Properties of Diamond Film Electrode

HU Xiao-jun, CAO Hua-zhen, ZHENG Guo-qu, CAO Shuai (College of Chemical Engineering and Material Science, Zhejiang University of Technology, Hangzhou 310014, China)  
In order to investigate the influences of boron-doping concentration on the electrochemical performances of diamond film electrode, the electrochemical behaviors of the boron-doped diamond film electrodes with different dopant densities were studied by the cyclic voltammetry and AC impedance. The results show that with the increase of the boron dopant density, the potential windows of the electrodes become narrower and the background currents become larger. In the electrolyte including ferri/ferrocyanide, the reaction performs on the electrode surface of the undoped diamond film is irreversible, while the reactions on the electrode surfaces of the B-doped diamond films show with good activity and are quasi-reversible. With the increase of boron-doping concentration, the electrochemical reaction carrying out on the electrode surface becomes a diffusion-controlled reaction. In the cyclic voltammetry experiments, during which the phenol simulated wastewater was treated by B-doped diamond film electrodes, the current densities of the oxidation peak of three B-doped diamond film electrodes prepared with increasing boron dopant densities are 0.8, 1.9 and 5.1 mA·cm-2, respectively. It indicates that the electrochemical oxidation ability of the diamond film electrode increases with the increase of the boron-doping concentration.
【Fund】: 浙江省教育厅资助课题(D1015227)。
【CateGory Index】: O484.42
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