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《Acta Optica Sinica》 2004-11
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Preparation and Study of Properties of Indium-Doped ZnO Films on Si Substrates

Peng Xingping Yang Yinghu Song Chang′an Wang Yinyue (School of Physics Science and Technology, Lanzhou University, Lanzhou 73000)  
Undoped and indium-doped zinc oxide films are deposited on Si substrates by radio frequency reactive sputtering technology. Glancing X-ray diffractometer (XRD) measurement indicated that In-doped sample is ZnO films. The structure, surfaces morphology and photoluminescent spectra of the sample are characterized by X-ray diffractometer, atomic force microscopy and fluorescent spectrophotometer, respectively. The effect of In-doping on the structure and photoluminescent properties of the films is analyzed. Compared with undoped ZnO film, In-doped ZnO film has highly c-axis oriented and the small lattice mismatch (0.16%). Surface of doped thin film is smooth and flat; the maximum roughness surface of sample is only 7nm. The blue-violet emission bi-peak locating at 415 nm and at 433 nm is observed in photoluminescence spectra of indium-doped ZnO films at room temperature. The mechanism of blue-violet emission bi-peak was discussed, and the blue-violet emission bi-peak is assigned to come from the In substitute impurity and Zn interstitial defects of ZnO.
【Fund】: 甘肃省自然科学基金 (ZS0 11 A2 5 0 5 0 C)资助课题
【CateGory Index】: TN304.21
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