Full-Text Search:
Home|Journal Papers|About CNKI|User Service|FAQ|Contact Us|中文
《Acta Optica Sinica》 2004-11
Add to Favorite Get Latest Update

Preparation and Study of Properties of Indium-Doped ZnO Films on Si Substrates

Peng Xingping Yang Yinghu Song Chang′an Wang Yinyue (School of Physics Science and Technology, Lanzhou University, Lanzhou 73000)  
Undoped and indium-doped zinc oxide films are deposited on Si substrates by radio frequency reactive sputtering technology. Glancing X-ray diffractometer (XRD) measurement indicated that In-doped sample is ZnO films. The structure, surfaces morphology and photoluminescent spectra of the sample are characterized by X-ray diffractometer, atomic force microscopy and fluorescent spectrophotometer, respectively. The effect of In-doping on the structure and photoluminescent properties of the films is analyzed. Compared with undoped ZnO film, In-doped ZnO film has highly c-axis oriented and the small lattice mismatch (0.16%). Surface of doped thin film is smooth and flat; the maximum roughness surface of sample is only 7nm. The blue-violet emission bi-peak locating at 415 nm and at 433 nm is observed in photoluminescence spectra of indium-doped ZnO films at room temperature. The mechanism of blue-violet emission bi-peak was discussed, and the blue-violet emission bi-peak is assigned to come from the In substitute impurity and Zn interstitial defects of ZnO.
【Fund】: 甘肃省自然科学基金 (ZS0 11 A2 5 0 5 0 C)资助课题
【CateGory Index】: TN304.21
Download(CAJ format) Download(PDF format)
CAJViewer7.0 supports all the CNKI file formats; AdobeReader only supports the PDF format.
Chinese Journal Full-text Database 10 Hits
1 HONG Wei-ming(Zhanjiang Normal College,Zhanjiang 524048,CHN);Preparation and Characteristics of ZnO∶Al Thin Films Prepared by Sol-gel Technique[J];Semiconductor Optoelectronics;2007-03
2 FANG Liang1,2,PENG Li-ping1,YANG Xiao-fei1,LI Yan-jiong1,3,KONG Chun-yang4(1.Dept.of Applied Physics;2.Key Lab.of Optoelectronic Technology and Systems of the Education Ministry of China,Chongqing University,Chongqing 400030,CHN;3.Chongqing Optoelectronics Research Institute,Chongqing 400060,CHN;4.Dept.of Applied Physics,Chongqing Normal University,Chongqing 400047,CHN);Study of Electrical and Optical Properties of Transparent Conductive In-doped ZnO Thin Films[J];Semiconductor Optoelectronics;2009-01
3 LV Jian-guo1,2,SONG Xue-ping1,SUN Zhao-qi1(1.School of Physics and Material Science,Anhui University,Hefei 230039,CHN;2.Department of Physics and Electronic Engineering,Hefei Teachers College,Hefei 230061,CHN);Surface Topography and Optical Properties of Al-doped ZnO Thin Films by Sol-gel Process[J];Semiconductor Optoelectronics;2009-01
4 FANG Liang1,2,PENG Liping1,YANG Xiaofei1,ZHOU Ke1,WU Fang1(1 Department of Applied Physics,Chongqing University,Chongqing 400044;2 Key Laboratory of Optoelectronic Technology and Systems of the Education Ministry of Chongqing University,Chongqing 400044);Research Advances of Opto-electrical Properties of Transparent Conductive ZnO∶In Films[J];Materials Review;2009-15
5 Zhang Fuchun~(1,2) Deng Zhouhu~2 Yan Junfeng~2 Zhang Zhiyong~21 College of Physics & Electronics,Yan'an University,Yan'an 7160002 School of Information Science and Technology,Northwest University,Xi'an 710069;First-Principles Calculation of Electronic Structure and Optical Properties of ZnO[J];Acta Optica Sinica;2006-08
6 Chen Qian1,2 Xie Quan1,2 Yang Chuanghua1,2 Zhao Fengjuan1,21College of Science,Guizhou University,Guiyang,Guizhou 550025,China2Institute of New Type Optoelectronic Materials and Technology,Guizhou University,Guiyang,Guizhou 550025,China;First-Principles Calculation of Electronic Structure and Optical Properties of Mg_2Si with Doping[J];Acta Optica Sinica;2009-01
7 Lin Jiaqi Ni Haifang Wang Chen Lei Qingquan(Laboratory of Engineering Dielectri and Application of Ministry of Education,Harbin University ofScience and Technology,Harbin,Heilongjiang 150080,China);Poly (Ethylene Terephthalate) Electronic Structural and Optical Propertie from First Principles Calculations[J];Acta Optica Sinica;2010-11
8 GUAN Li,LI Qiang,JIN Litao,GUO Jianxin,ZHOU Yang,GENG Bo,ZHAO Qingxun,LIU Baoting (College of Physics Science & Technology, Hebei University, Baoding 071002, Hebei, China);ELECTRONIC STRUCTURE AND OPTICAL PROPERTIES OF ZnO DOPED WITH Al OR Ni[J];Journal of the Chinese Ceramic Society;2009-08
9 FU Guang-sheng~1,SUN Wei~1,LAU¨U Xue-qin~1,WANG Chun-sheng~1,YIN Zhi-hui~(1,2),YU Wei~1()~1College of Physics Science and Technology,Hebei University,Baoding,Hebei 071002,China()~2Physics Department,College of Hengshui,Hengshui,Hebei 053000,China;Photoluminescence of ZnO Films Naturally Doped and Codoped with N and Al[J];Chinese Journal of Lasers;2006-04
10 YANG Yi-fa1,2,3,LONG Hua1,2,YANG Guang1,2,DAI Neng-li1,2,ZHENG Qi-guang1,2,LU Pei-xiang1,211Wuhan National Laboratory for Optoelectronics,2School of Optoelectronics Science and Engineering,Huazhong University of Science and Technology,Wuhan,Hubei 430074,China3Department of Physics,Hubei Normal University,Huangshi,Hubei 435002,China;Effect of Temperature on Structure and Properties of Femtosecond Laser Deposited Silicon Based Zinc Oxide Thin Films[J];Chinese Journal of Lasers;2007-09
Chinese Journal Full-text Database 10 Hits
1 WANG Xin qiang,DU Guo tong,JIANG Xiu ying,WANG Jin zhong,YANG Shu ren (National Integrated Optoelectronics Laboratory,Department of Electronic Engineering,Jilin University,Changchun 130023,China);Advances in Research on ZnO Film[J];SEMICONDUCTOR OPTOELECTRONICS;2000-04
2 Mao Xiangjun, Yang Zhijian, Li Jing, Qu Jianqin, Zhang Guoyi(Physics Department,Peking University, Beijing\ 100871) Ye Zhizhen, Li Jianguang, Wang Lei, Zhao Binhui(State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou\ 310027)Receive;Growth of GaN Single Crystal Film on ZnO/Al\-2O\-3 Substrate and Its Characteristics[J];CHINESE JOURNAL OF SEMICONDUCTORS;1999-08
3 Li Jianguang, Ye Zhizhen, Wang Lei, Zhao Binghui, Yuan Jun, Que Duanlin(State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou\ 310027)Received 3 May 1998, revised manuscript received 12 June 1998;Characterization of ZnO Thin Film Treated With High Temperature for Buffer Layer of GaN on Silicon Substrate[J];CHINESE JOURNAL OF SEMICONDUCTORS;1999-10
4 YE Zhi-zhen,CHEN Han-hong,LIU Rong,ZHANG Hao-xiang and ZHAO Bin-hui(National Key Laboratory of Silicon Materials,Zhejiang University,Hangzhou 3100 27,China);Structure and PL Spectrum of ZnO Films Prepared by DC Reactive Magnetron Sputtering[J];Chinese Journal of Semiconductors;2001-08
5 Song Dengyuan,Wang Yongqing,Sun Rongxia,Zong Xiaoping and Guo Baozeng(College of Electronic and Informational Engineering,Hebei University,Baoding 071002,China);Effect of Ar Pressure on Properties of ZnO∶Al Films Prepared by RF Magnetron Sputtering[J];Chinese Journal of Semiconductors;2002-10
6 Yuan Guodong,Ye Zhizhen,Zeng Yujia,Lü Jianguo,Qian Qing,Huang Jingyun, Zhao Binghui and Zhu Liping(State Key Laboratory of Silicon Materials,Zhejiang University,Hangzhou 310027,China);Preparation and Characteristics of p-Type ZnO Films Using Al and N Codoping Method by DC Reactive Magnetron Sputtering[J];Chinese Journal of Semiconductors;2004-06
7 Wen Zhanhua,Wang Li,Fang Wenqing,Pu Yong,Luo Xiaoping,Zheng Changda, Dai Jiangnan,and Jiang Fengyi(Education Ministry Engineering Research Center for Luminescence Materials and Devices, Nanchang University,Nanchang 330047,China);Influence of Annealing Temperature on Structural and Optical Properties of ZnO Thin Films [J];Chinese Journal of Semiconductors;2005-03
8 CHEN Yuan 1\ ZHANG Deheng 1\ MA Jin 2\ YANG Tianlin 3 (1. Department of Physics, Shangdong University, 250100;\ 2. Institute of Optoelectronic Materials and Devices,Shandong Unversity, 250100;\ 3. Zibo Inctitute, 255200);Study of Transparent Conducting ZnO∶Al Films Prepared on Different Organic Substrate[J];;1999-03
9 Zhang Deheng ( Department of Physics, Shandong University, Jinan, 250100);Shift of Optical Absorption Edgesin Transparent Conducting Films[J];;1998-03
10 Wang Cun Wang Hong Shen Yusheng (University of Science and Technology of China);Development of the Composite - Oxide Gas Sensitivity Material[J];Journal of Transducer Technology;1994-01
【Secondary References】
Chinese Journal Full-text Database 10 Hits
1 LEI Jie-hong1,XING Pi-feng1,TANG Yong-jian1,ZHOU Xu-dong2,WU Wei-dong1,YANG Yao2(1.Research Center of Laser Fusion of CAEP,Mianyang 621900,CHN;2.Chongqing Optoelectronics Research Institute,Chongqing 40060,CHN);Simulation of Electronic Structure and Optical Properties of LiH Crystal[J];Semiconductor Optoelectronics;2009-06
2 Tang Kun,Gu Shulin,Zhu Shunming(Nanjing National Lab.of Microstructures,Department of Physics,Nanjing University,Nanjing 210093,China);Growth and Electric Characteristics of p-Type N-Doped ZnO Film by Metal-Organic Chemical Vapor Deposition[J];Semiconductor Technology;2008-S1
3 Zheng Yongping1,Chen Zhigao1,Lu Yu1,Wu Qingyun1,Weng Zhenzhen2,and Huang Zhigao1,2,(1 Department of Physics,Fujian Normal University,Fuzhou 350007,China)(2 Fujian Institute of Research on the Structure of Matter,Chinese Academy of Sciences,Fuzhou 350002,China);Influence of Be-Doping on Electronic Structure and Optical Properties of ZnO[J];Journal of Semiconductors;2008-12
4 LI Ji1, ZHANG Feng-ying2, WANG Yang1 (1.Foundational Department, Aviation University of Air Force, Changchun 130022, China; 2.College of Chengxian, Southeast University, Nanjing 210088, China);Analysis of the Calculation Results Based on the First-Principles[J];Computer Knowledge and Technology;2010-14
5 WEI Xinying,QI Kangcheng,YUAN Hongmei,ZHANG Liangyan(School of Opto-electronic Information,University of Electronic Science and Technology of China,Chengdu 610054,China);The Effect of Oxygen Concentration to DC Magnetron Sputtering ZnO:Al Films[J];Chinese Journal of Electron Devices;2010-01
6 ZHANG Guohong,QI Kangcheng,QUAN Xiang,WEN Yongliang(School of Optoelectronic Information,University of Electronic Science and Technology of China,Chengdu 610054,Chuan);NiO/ZnO Hetero-Junction Diode by Magnetron Sputtering and Their Optoelectrical Characteristics[J];Chinese Journal of Electron Devices;2011-01
7 LI Ping1,DENG Sheng-hua2(1.Department of Mathmatics and Physics,Anhui Institute of Architecture and Industry,Hefei 230022,China;2.School of Science,Beijing University of Aeronautics and Astronautics,Beijing 100083,China);First Principle Studies on the Effects of Silicon and Natrium on an Al Grain Boundary[J];Journal of Fudan University(Natural Science);2009-01
8 Li Enling1 Ma Deming1 Ma Hong1 Wang Xuewen2 Wang Xue1 Yuan Yongxia1(1 Science School,Xi'an University of Technology,Xi'an 710048 2 School of Information Science and Technology,Northwestern University,Xi'an 710069);Study on Structure and Photoelectron Spectroscopy about Si_(n-1)N and Si_(n-2)N_2(n=3~8) Ion Clusters[J];Acta Optica Sinica;2007-11
9 Niu Jiangang1 Zhao Wuzhou1 Gao Wei1 Wang Cuibiao1 Sun Weilian21College of Quality and Technical Supervision,Hebei University,Baoding,Hebei 071051,China2Mechanical and Electronic Engineering College,Hebei Agriculture University,Baoding,Hebei 071001,China;Calculations on Optical Properties of Cubic TiBN[J];Acta Optica Sinica;2008-02
10 Hou Qingyu Zhang Yue Zhang Tao(School of Material Science & Engineering,Beijing University of Aeronaustics and Astronautics,Beijing,100083,China);Study on First Principle of Optical Property of Oxygen Vacancy-Doped Anatase TiO_2[J];Acta Optica Sinica;2008-07
©2006 Tsinghua Tongfang Knowledge Network Technology Co., Ltd.(Beijing)(TTKN) All rights reserved