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《Acta Optica Sinica》 2005-08
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Research on Two-Photon Absorption Enhancement of CdS in One-Dimensional Photonic Band Gap Structures

Shen Jie~1Ma Guohong~2Zhang Zhuangjian~1Hua Zhongyi~1Tang Singhai~21 Department of Materials Science, Fudan University, Shanghai 2004332 Department of Physics, National University of Singapore, Singapore  
One-dimensional photonic crystals (1D PC) with single CdS defect layer in TiO_2/SiO_2 dielectric thin films stack with different periods and structural parameters were fabricated by vacuum deposition. Two-photon absorption (TPA) of the CdS defect layer in the photonic crystals was investigated by pump-probe measurement. Experimental results show a significant enhancement of TPA coefficient in the CdS defect layer in one-dimensional photonic crystal. Different magnitude of enhanced two-photon absorption coefficient of CdS defect layer in one-dimensional photonic crystal with different photonic band gap has been observed. The enhanced two-photon absorption effect results from the electric field enhancement due to the light localization in the CdS defect layer. The electric field enhancement in defect laser was determined by the structural parameters of one-dimensional photonic crystal such as period, the position and width of bandgap and defect mode. The highest electric field intensity at defect layer is obtained with the alternated quarter-wavelength dielectric thin films of high and low refractive indexes and a defect mode matched with incident light wavelength.
【CateGory Index】: O734
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【References】
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【Co-citations】
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9 Li Chunxia1 Dang Suihu1 Han Peide21College of Physics and Electronic Engineering,Yangtze Normal University,Chongqing 408003,China2College of Materials Science and Engineering,Taiyuan University of Technology,Taiyuan,Shanxi 030024,China;Vacancies Effects on Electronic Structure and Optical Properties of CdS[J];Acta Optica Sinica;2010-05
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