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《Journal of The Chinese Ceramic Society》 1980-04
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INTRODUCTION TO THE METHOD OF QUANTITATIVE DETERMINATION OF PHASE CONTENT OF Si_3N_4 BY X--RAY DIFFRACTION ANALYSIS

Zhou He-ping Qinghua University,Department of Chemistry and Chemical Engineering  
The basic principle of "normalized method" as reported by P.Gazzara and R.Messier is-described briefly.A simple and direct calculation method has been used in the determinationof the phase content of Si_3N_4 by using theoretical intensities. Experiment results showed thatthe method can minimize the effects of serious preferred orientation of alpha silicon nitride.The accuracy and reproducibility have been discussed in the article.In order to increase theaccuracy of the "normalized method", the importance of reasonable selection of the diffractionpeaks of space distribution is stressed. The theoretical intensity values of (111) and(220) diffrac-tion peaks for silicon have been accurately corrected.
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