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《Industrial Heating》 2007-06
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The Optimized Preparation Process of Silicon Carbide Heating Element

ZHANG Xiao-hua1,2,LI Xiao-chi2(1.Xi’an JiaoTong University,Xia’n 710049,China;2.Material Science and Engeering School Xi’an University of Science and Technology,Xia’n 710054,China)  
SiC is extensively used in heatig Element because of its excellent performance of heat,mechanics and electric conduction.Through studying on preparation technology and testing products’ properties,the optimal biscuit firing and sintering temperature are found,the char-acteristics of temperature field between single thermal source and double thermal sources are contrasted.And the optimal sintering field area is also found.The electric conduction and the compressive strength of the sample are tested.The product's components are analyzed through applying X-ray Diffraction,The products’ surface shape,pore structure and distribution,crystal structure,These are analyzed through applying electronic microscope.The factors influencing the performance of Silicon Carbide heating Element are confirmed.
【Fund】: 陕西省工业攻关项目(2004K07d16)
【CateGory Index】: TM924.05
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