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《Industrial Technology Innovation》 2016-04
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Research Effects of Annealing Temperature on Room-temperature Resistances of Mn-Co-Ni-O Thin Films

Shiwo Ta;Pei Zhu;Jiao Yang;Junyao Luo;State Key Laboratory of Advanced Materials and Electronic Components, Guangdong Fenghua Advanced Technology Holding Co., Ltd.;  
Mn-Co-Ni-O(Mn:Co:Ni=3:2:1) negative temperature coefficient films were prepared on the Al_2O_3 substrates by vacuum RF magnetron sputtering, the need for high temperature annealing treatment,and then on the basis of the preparation of NTC thermistor film. Using X ray diffraction(XRD), profile system, scanning electron microscope(SEM) and the constant temperature tank and so on, analyzes the functions of NTC thermistor film membrane structure, functional thin film morphology and performance,to study the different annealing temperature on the NTC thermistor film resistance at room temperature.The results show that the grains and film shrinkage grow gradually with the increase of annealing temperature while the room-temperature resistances increase when the annealing temperature is under 1000℃.
【Fund】: 国家科技支撑计划课题(2014BAE10B01)
【CateGory Index】: TN37
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